CLT335

CLT335 NPN Silicon Phototransistor 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) ® Clairex 0.215 (5.46) 0.205 (5.21)  Technologies, Inc. March, 2001 COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ....................................................................... -65°C to +150°C • ±9° acceptance angle operating temperature .................................................................... -65°C to +125°C • custom aspheric lensed TO-18 lead soldering temperature(1) .......................................................................... 260°C package collector-emitter voltage...................................................................................... 30V • transistor base is not bonded • tested and characterized at 850nm continuous collector current ............................................................................. 50mA continuous power dissipation(2) ..................................................................... 250mW • RoHS compliant notes: description 1. 0.06” (1.5mm) from the header for 5 seconds maximum The CLT335 is a silicon NPN 2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C. phototransistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupling. The CLT335 is mechanically and spectrally matched to Clairex's CLE335 LED. For additional information, call Clairex. electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions IL ICEO V(BR)CEO tr, tf θHP notes: Light current(3) Collector dark current Collector-emitter breakdown Output rise and fall time Total angle at half sensitivity points 1.0 30 - 2.5 5.0 18 25 - mA nA V µs deg. VCE=5V, Ee=0.5mW/cm2 VCE=10V, Ee=0 IC=100µA IC = 1mA, VCE=5V, RL=1kΩ. 3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 850nm. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/16/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com