CPC3703

CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS(ON) (max) 4Ω IDSS (min) 360mA Package SOT-89 Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable FET device that has been used extensively in Clare’s Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Features • Depletion mode device offers low RDS(ON) at cold temperatures • Low on resistance 4 ohms max. at 25ºC • High input impedance • High breakdown voltage 250V • Low VGS(off) voltage -1.6 to -3.9V • Small package size SOT89 Applications • • • • • • Ignition Modules Normally-on Switches Solid State Relays Converters Telecommunications Power Supply Ordering Information Part # CPC3703C CPC3703CTR Description SOT89 (100/Tube) SOT89 (2000/Reel) Package Pinout D G D S Circuit Symbol D G (SOT89) S Pb RoHS 2002/95/EC e3 www.clare.com 1 DS-CPC3703-R03 CPC3703 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Total Package Dissipation 1 Operational Temperature Storage Temperature 1 Ratings 250 ±20 1.6 -55 to +125 -55 to +125 Units V V W ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Mounted on 1"x1" FR4 board. Thermal Characteristics Package SOT-89 ID (continuous) 360mA ID (pulsed) 600mA Power Dissipation @TA=25ºC 1.6W θjc ºC/W 15 360mA 600mA IDR IDRM Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS(off) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current Saturated Drain-to-Source Current Static Drain-to-Source On-State Resistance Change in RDS(on) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Source-Drain Diode Voltage Drop Symbol BVDSX VGS(off) dVGS(off) /dT IGSS ID(off) IDSS RDS(on) dRDS(on) /dT GFS CISS COSS CRSS td(on) tr td(off) tf VSD Conditions VGS= -5V, ID=100µA VDS= 15V, ID=1mA VDS= 15V, ID=1mA VGS=±20V, VDS=0V VGS= -5V, VDS=Max Rating VGS= -5V, VDS=200V, TA=125ºC VGS= 0V, VDS=15V VGS= 0V, ID=200mA ID= 100mA, VDS = 10V VGS= -5V VDS= 25V f= 1MHz VDD= 25V ID= 150mA VGS= 0V to -10V RGEN= 50Ω VGS= -5V, ISD=150mA Min 250 -1.6 300 225 Typ 327 51 27 23 8 17 70 0.6 Max -3.9 4.5 100 1 1 4 1.1 350 65 35 35 20 25 80 1.8 V Units V V mV/ºC nA µA mA mA Ω %/ºC m pF Ω ns - Switching Waveform & Test Circuit 0V 90% INPUT 10% PULSE GENERATOR VDD RL OUTPUT -10V t(ON) td(ON) tr t(OFF) td(OFF) tF Rgen D.U.T. VDD OUTPUT 10% 10% INPUT 0V 90% 90% 2 www.clare.com R03 CPC3703 PERFORMANCE DATA* Output Characteristics (TA=25ºC) 1000 900 800 700 600 500 400 300 200 100 0 0 1 2 3 VDS (V) 4 VGS=-1.0 350 300 VGS(OFF) (V) VGS=-1.5 250 ID (mA) 200 150 100 50 6 0 -3.5 -3.0 -2.5 VGS (V) -55ºC +125ºC +25ºC Transfer Characteristics (VDS=5V) VGS(OFF) & RON Vs. Temperature 5.5 5.0 4.5 4.0 3.5 3.0 2.5 0 -1.5 -50 -0 50 Temperature (ºC) VGS(OFF) VDS=10V ID=1mA VGS=0V ID=200mA 8 7 RON 6 RON (Ω) 5 4 3 2 150 1 ID (mA) VGS=-2.0 VGS=-2.5 5 -2.0 100 Power Dissipation vs. Ambient Temperature 1.8 Power Dissipation (W) 1.6 1.4 GFS (m ) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Temperature (ºC) Ω 300 250 200 150 100 50 0 Transconductance vs. Drain Current (VDS=10V) -55ºC +25ºC +125ºC ID (A) Maximum Rated Safe Operating Area at 25ºC 1.0 0.1 0.001 0.0001 0 10 20 30 40 50 60 70 80 90 100 0 10 VDS (V) 100 1000 ID (mA) Capacitance vs. Drain Source Voltage (VGS=-5V) 600 525 Capacitance (pF) 450 375 300 225 150 75 0 0 10 20 VDS (V) 30 40 VOSS VRSS VISS RON (Ω) On-Resistance vs. Drain Current (VGS=0V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID (A) *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R03 www.clare.com 3 CPC3703 Manufacturing Information Soldering For proper assembly, the component must be processed in accordance with the current revision of IPC/JEDEC standard J-STD-020. Failure to follow the recommended guidelines may cause permanent damage to the device resulting in impaired performance and/or a reduced lifetime expectancy. Washing Clare does not recommend ultrasonic cleaning or the use of chlorinated solvents. Pb RoHS 2002/95/EC e3 MECHANICAL DIMENSIONS SOT89 Package 1.626 - 1.829 (0.064 - 0.072) R 0.254 (R 0.010) 1.397 - 1.600 (0.055 - 0.063) 1.90 (0.075) 3.937 - 4.242 (0.155 - 0.167) 2.286 ± 2.591 (0.090 0.102) 1.40 (0.055) 0.889 - 1.194 (0.035 - 0.047) 0.356 - 0.483 (0.014 - 0.019) 0.432 - 0.559 (0.017 - 0.022) 0.356 - 0.432 (0.014 - 0.017) 45º 2.70 (0.107) 50º 1.90 (0.074) 5.00 (0.197) Recommended PCB Land Pattern 4.394 - 4.597 (0.173 - 0.181) 0.60 (0.024) TYP 3 1.422 - 1.575 (0.056 - 0.062) 2.921 - 3.073 (0.115 - 0.121) Dimensions mm (inches) Tape and Reel Packaging for SOT89 Package 330.2 Dia (13.00 Dia) Top Cover Tape Thickness 0.102 Max (0.004 Max) Top Cover Tape W=12.00 ± 0.30 (0.472 ± 0.012) B0=4.52 ± 0.10 (0.178 ± 0.004) P=8.00 ± 0.10 (0.315 ± 0.004) K0=1.90 ± 0.10 (0.075 ± 0.004) Embossed Carrier A0=4.91 ± 0.10 (0.193 ± 0.004) Dimensions mm (inches) Embossment NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2 For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice. Specification: DS-CPC3703-R03 ©Copyright 2009, Clare, Inc. All rights reserved. Printed in USA. 10/13/09 4