CPC5602C

CPC5602C N Channel Depletion Mode FET Features • • • • • • Low on resistance 10 ohms High input impedance Low input and output leakage Small package size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Applications • Support Component for LITELINK TM Data Access Arrangement (DAA) • Normally-on switch • Telecom • Constant Current Source Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications. One of the primary applications for the CPC5602C is as a linear regulator/ hook switch for the LITELINKTM Data Access Arrangements (DAA) Devices (CPC5610A, CPC5611A, CPC5604A). The CPC5602C has a typical on-resistance of 8Ω, a breakdown voltage exceeding 350V and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Absolute Maximum Ratings Parameter VDSS Voltage Total Package Dissipation Operational Temperature Storage Temperature Soldering Temperature Min — — -40 -40 — Max 350 2.5 +85 +125 +220 Units V W O O O Ordering Information Description N-Channel Depletion Mode FET, SOT-223 Package CPC5602CTR N-Channel Depletion Mode, SOT223 Package FET-TAPE and Reel (1000 units min) Part # CPC5602C C C C Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied. Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and effect its reliability. DS-CPC5602C-Rev. 1 www.clare.com 1 CPC5602C Electrical characteristics (@0 to 85oC unless otherwise specified) PARAMETERS Breakdown Voltage Gate-to-Source Off Voltage Drain Current 1 Drain Current 2 Continuous Drain Current 1 Continuous Drain Current 2 On Resistance Gate Leakage Current Gate Capacitance Thermal Resistance SYMBOL V(BR)DSS VGS1 ID1 ID2 IDC1 IDC2 RDS IGSS CISS OJC MIN 350 -3.6 130 125 60 TYP 8 MAX --2 5 10 .1 300 14 UNITS V V mA mA mA mA Ω µA pF o C/W CONDITIONS VGS=-5v, ID