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1N4002B-G

1N4002B-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    DO41

  • 描述:

    DIODE GEN PURP 100V 1A DO41

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4002B-G 数据手册
General Purpose Silicon Rectifiers 1N4001-G Thru. 1N4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device DO-41 Features - Low cost construction. - Fast forward voltage drop. - Low reverse leakage. - High forward surge current capability. 1.000(25.40) Min. - High soldering temperature guarantee: 260 OC/10 seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg) tension. 0.205(5.21) 0.161(4.10) Mechanical data 0.117(2.97) DIA. 0.078(2.00) DIA. - Case: Transfer molded plastic, DO-41 - Epoxy: UL 94V-0 rate flame retardant 1.000(25.40) Min. - Polarity: Indicated by cathode band - Lead: Plated axial lead, solderable per MIL-STD-750, method 2026 0.035(0.90) DIA. 0.027(0.70) DIA. - Mounting position: Any - Weight: 0.012ounce, 0.34 grams(approx.). Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol 1N4001 -G 1N4002 -G 1N4003 -G 1N 4004 -G 1N4005 -G 1N4006 -G 1N4007 -G Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current 0.375"(9.5mm) Lead Length @TA=55°C I(AV) 1.0 A Peak Forward Surge Current, 8.3mS single half sine-wave superimposed on rated load (JEDEC method) IFSM 30 A Maximum Instantaneous Forward Voltage @1.0A VF 1.1 V Parameter Maximum DC Reverse Current at Rated DC Blocking voltage per element TA=25°C 5.0 IR μA 50 TA=100°C CJ 15 pF RθJA 60 °C/W Operating Temperature Range TJ -55 ~ +150 °C Storage Ttemperature Range TSTG -55 ~ +150 °C Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal Resistance from junction to ambient and junction to lead at 0.375”(9.5mm) lead length P.C.B mounted. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-BG013 Comchip Technology CO., LTD. General Purpose Silicon Rectifiers Rating and Characteristic Curves ( 1N4001-G Thru. 1N4007-G) Fig.1 - Typical Forward Current Derating Curve Fig.2 - Maximum. Non-Repetitive Peak Forward Surge Current 35 Peak Forward Surge Current, ΙFSM (A) Average Forward Current, I(AV) (A) 1.2 1.0 0.8 0.6 0.4 Single phase Half wave, 60Hz Resistive or inductive load 0.2 30 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 1 2 5 10 20 50 100 Ambient Temperature, TA (°C) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Characteristics Fig.4 - Typical Reverse Characteristics Instantaneous Reverse Current, IR (mA) 10 Instantaneous Forward Current, IF (A) 8.3mS, single half sine-wave, JEDEC method. TJ=TJmax 1.0 0.1 Pulse width=300μs. 1% duty cycle TJ=25°C 0.01 10 TJ=100 OC 1.0 0.1 TJ=25 OC 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 Instantaneous Forward Voltage, VF (V) 20 40 60 80 100 120 140 Percent of Peak Reverse Voltage, (%) Fig.5 - Typical Junction Capacitance 100 Capacitance, CJ (pF) f=1MHz O TJ=25 C 10 10 0.1 1 10 100 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-BG013 Comchip Technology CO., LTD. General Purpose Silicon Rectifiers Taping Specification For Axial Lead Diodes E 90°± 5° Z A L1 B L2 T E D0 W0 L D1 H D W DO-41 SYMBOL A B Z T E |L1-L2| (mm) 5.00 ± 0.50 52.40 ± 1.50 1.60 (max) 6.00 ± 0.40 3.00 (max) 1.00 (max) 0.197 ± 0.020 2.063 ± 0.059 0.063 (max) 0.236 ± 0.016 0.118 (max) 0.039 (max) (inch) DO-41 SYMBOL D1 D0 D W0 L W H (mm) 85.70 ± 0.30 16.60 ± 0.40 330.00 72.00 ± 3.00 260.00 ± 5.00 75.00 ± 5.00 150.00 ± 5.00 (inch) 3.374 ± 0.012 0.654 ± 0.016 12.992 2.835 ± 0.118 10.236 ± 0.197 2.953 ± 0.197 5.906 ± 0.197 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 3 QW-BG013 Comchip Technology CO., LTD. General Purpose Silicon Rectifiers Marking Code Part Number Marking Code Packaging 1N4001T-G 1N4002T-G 1N4003T-G 1N4004T-G 1N4005T-G 1N4006T-G 1N4007T-G 1N4001A-G 1N4002A-G 1N4003A-G 1N4004A-G 1N4005A-G 1N4006A-G 1N4007A-G 1N4001B-G 1N4002B-G 1N4003B-G 1N4004B-G 1N4005B-G 1N4006B-G 1N4007B-G 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 REEL REEL REEL REEL REEL REEL REEL AMMO AMMO AMMO AMMO AMMO AMMO AMMO BULK BULK BULK BULK BULK BULK BULK 1N4XXX 1N4XXX = Product type marking code Note: 1) Suffix code after part number to specify packaging item . Packaging REEL PACK AMMO PACK BULK PACK Code T A B Standard Packaging BULK PACK REEL PACK Case Type DO-41 REEL Reel Size ( pcs ) (inch) 5,000 13 Case Type BOX ( pcs ) DO-41 1,000 AMMO PACK Case Type BOX ( pcs ) DO-41 5,000 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-BG013 Comchip Technology CO., LTD.
1N4002B-G
物料型号:1N4001-G至1N4007-G

器件简介:这些是通用的硅整流器,具有低成本构造、快速正向电压降、低反向漏电、高正向浪涌电流能力等特点。

引脚分配:文档中提到了引脚分配,但未提供具体的引脚图。通常,整流器会有阳极和阴极两个引脚。

参数特性:包括最大重复峰值反向电压(VRRM)、最大RMS电压(VRMS)、最大直流阻断电压(Voc)、最大平均正向整流电流(I(v))、峰值正向浪涌电流(IrsM)、最大正向瞬态电压(VF)、最大直流反向电流(R)、典型结电容(CJ)和典型热阻(ReJA)。

功能详解:文档提供了正向电流降额曲线、最大非重复峰值正向浪涌电流、瞬态正向特性、反向特性和结电容的典型图表。

应用信息:这些整流器适用于单相半波、60Hz、电阻性或电感性负载。对于电容性负载,需要降低电流20%。

封装信息:封装类型为DO-41,文档提供了详细的机械数据和尺寸。
1N4002B-G 价格&库存

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