1N5819-G

Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features DO-41 - Metal-Semiconductor junction with guard ring. - Epitaxial construction. - Low forward voltage drop. 0.030(0.75) DIA. 0.020(0.50) - High current capability. 1.000(25.40) Min. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Mechanical data 0.205(5.20) 0.161(4.10) - Case: JEDEC DO-41 molded plastic. - Epoxy: UL 94V-0 rate flame retardant. - Polarity: Color band denotes cathode. - Mounting position: Any. 0.106(2.70) DIA. 0.079(2.00) 1.000(25.40) Min. Circuit Diagram Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol 1N5817-G 1N5818-G 1N5819-G Unit Maximum recurrent peak reverse voltage VRRM 20 30 40 V Maximum RMS voltage VRMS 14 21 28 V Maximum DC blocking voltage VDC 20 30 40 V Parameter Maximum average forward rectified current @TA=75°C IF(AV) 1.0 A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 25 A Maximum forward voltage at 1.0A DC VF 0.450 0.550 0.600 V VF 0.750 0.875 0.900 V Maximum forward voltage at 3.0A DC Maximum DC reverse current at rated DC blocking voltage Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Operating temperature range Storage temperature range @TJ=25°C @TJ=100°C 1.0 IR mA 10 CJ 110 pF RθJA 80 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance junction to ambient. REV:C Page 1 QW-BG016 Comchip Technology CO., LTD. Schottky Barrier Rectifiers Rating and Characteristic Curves (1N5817-G Thru.1N5819-G) Fig.2 - Maximum Non-Repetitive Surge Current Fig.1 - Forward Current Derating Curve 40 Peak Forward Surge Current, (A) 1.0 0.8 0.6 0.4 Single phase Half wave, 60Hz Resistive or inductive load 0.2 0 30 20 10 0 0 25 50 75 100 125 150 175 10 1 100 Ambient Temperature, (°C) Number of Cycles at 60Hz Fig.3 - Typical Junction Capacitance Fig.4 - Typical Forward Characteristics 1000 1 1 10 100 1.0 1N 58 19 1N Instantaneous Forward Current, (A) 100 58 17 10 f = 1MHz TJ = 25°C Capacitance, (pF) Pulse width 8.3ms single half sine-wave (JEDEC Method) 1N 58 18 Average Forward Current, (A) 1.2 TJ=25°C Pulse width 300µs 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage, (V) Reverse Voltage, (V) REV:C Page 2 QW-BG016 Comchip Technology CO., LTD. Schottky Barrier Rectifiers Marking Code Part Number Marking code 1N5817-G 1N5817 1N5818-G 1N5818 1N5819-G 1N5819 1N58XX XX = Product type marking code Standard Packaging AMMO PACK Case Type BOX ( pcs ) DO-41 5,000 REV:C Page 3 QW-BG016 Comchip Technology CO., LTD.