2010-G

Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Diffused Junction Low Forward Voltage Drop High Reliability High Current Capability High Surge Current Capability Ideal for Printed Circuit Boards H J D E I G B +~~A C KBP Min. Max Dim 14.22 15.24 A B 11.68 10.67 C 11.68 12.70 D 4.57 5.08 3.60 4.10 E 2.16 2.67 G 12.70 H 0.88 0.76 J 1.52 I All Dimension in mm KBP Mechanical Data: Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting position: Any Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC Symbol KBP 200-G KBP 201-G KBP 202-G KBP KBP KBP KBP 204-G 206-G 208-G 2010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 2.0 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t