2N7002

N -CHANNEL TRANSISTOR COMCHIP www.comchiptech.com 2 N7002 Description The MTN7002N 2 i s a N-channel enhancement-mode MOS transistor. .119 (3.0) .110 (2.8) SOT-23 .020 (0.5) Equivalent Circuit Top View .056 (1.40) .047 (1.20) 3 1 2 .006 (0.15)max. .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) G Gate S Sourse D Drain .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) Absolute Maximum Ratings Parameter (Ta=25 C) Symbol Limits Unit Drain-Sourse Drain-Sourse Voltage Drain-Gate Voltage (RGS=1M ) Gate-Source Voltage Continuous Drain Current (Ta=25 C) Continuous Drain Current (Ta=100 C) Pulsed Drain Current (Ta=25 C) Total Power Dissipation (Ta=25 C) DERATE Above 25 C Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Lead Temperature, for 10 second Soldering BVDSS BVDSS VGS ID ID ID Pd Tj Tstg 60 60 60 +/-40 200 115 800 200 0.16 -55~+150 -55~+150 625 260 *1 *1 *2 V V V mA mA mA mW mW/ C C C C/W C MDS0303007A Page 1 .044 (1.10) .035 (0.90) N-CHANNEL TRANSISTOR Characteristics (Ta=25 C) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) VDS(ON) RDS(ON) GFS Ciss Coss Crss Min. 60 1 500 80 Typ. Max. 2.5 100 100 1 0.375 3.75 7.5 7.5 50 25 5 Unit V V nA nA uA mA V V COMCHIP www.comchiptech.com mS pF Test Conditions VGS=0, ID=10uA VDS=2.5V, ID=0.25mA VGS=+20V, VDS=0 VGS=-20V, VDS=0 VDS=60V, VGS=0 VDS>2VDS(ON), VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V VDS>2VDS(ON), ID=200mA VDS=25V, VGS=0, f=1MHz *Pulse Test : Pulse Width 380us, Duty Cycle 2% Characteristic Curves TYPICAL OUTPUT CHARACTERISICS 1.4 VGS=8V 1.2 VGS=5V 1.2 1.4 TYTICAL TRANSFER CHARACTERISTIC DRAIN CURRENT---ID(A) 1.0 DRAIN CURRENT---ID(A) 1.0 0.8 VGS=4V 0.6 0.8 0.6 0.4 0.4 0.2 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 DRAIN-SOURCE ---VDS(V) 0.0 0 1 2 3 4 5 6 7 8 9 10 GATE-SOURCE VOLTAGE---VGS(V) M DS0303007A Page 2 N-CHANNEL TRANSISTOR STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT COMCHIP STATIC DRAIN-SOURCE ON-STATE RESISTANCE VS GATE-SOURCE VOLTSAGE w ww.comchiptech.com STATIC DRAIN-SOURCE ON-STATE RESISTANCE--RDS(on)(ohm) STATIC DRAIN-SOURCE ON-STATE RESISTANCE--RDS(on)(ohm) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 DRAIN CURRENT---ID(A) 1.0 1.2 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 GATE-SOURCE VOLTAGE---VGS(V) VGS=5 V VGS=10 FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT 1000 REVERSE DRAIN CURRENT vs SOURCE-DRAIN VOLTAGE 1.00 REVERSE DRAIN CURRENT---IDR(A) FORWARD TRANSFER ADMITTANCE---GFS(ms) VGS=10V 100 Pulsed 0.10 10 VGS=10V VGS=0 V 1 0.001 0.01 0.1 1 0.01 0.00 0.50 1.00 1.50 SOURCE-DRAIN VOLTAGE---VSD(V) DRAIN CURRENT---ID(A) SWITCHING CHARACTERISTICS 1000 Tf SWITCHING TIMES---(ns) 100 Td(off) Td(on) 10 Tr 1 0.001 0.01 DRAIN CURRENT---ID(A) 0.1 1 MDS0303007A Page 3