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2N7002W-G

2N7002W-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    SC70-3

  • 描述:

    MOSFET N-CH 60V 0.25A SOT323

  • 数据手册
  • 价格&库存
2N7002W-G 数据手册
MOSFET 2N7002W-G (N-Channel) RoHS Device RDS(on)MAX V(BR)DSS ID SOT-323 5Ω @ 10V 60V 115mA 0.087(2.20) 0.079(2.00) 7Ω @ 5V 3 D 0.053(1.35) 0.045(1.15) G Features 1 2 S 0.055(1.40) 0.047(1.20) - High density cell design for low RDS(ON). 0.006(0.15) 0.003(0.08) - Voltage controlled small signal switch. - Rugged and reliable. 0.096(2.45) 0.085(2.15) 0.039(1.00) 0.035(0.90) - High saturation current capability. Mechanical data 0.004(0.10)max. 0.016(0.40) 0.008(0.20) - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. 0.018(0.46) 0.010(0.26) Dimensions in inches and (millimeter) - Weight: 0.006 grams(approx.) Equivalent Circuit 3 D 1. G : Gate 2. S : Source 3. D : Drain 1 G S 2 Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS 20 V Continuous drain current ID 115 mA Power dissipation PD 200 mW RθJA 625 °C/W Junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C Parameter Thermal resistance Conditions Junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 1 Comchip Technology CO., LTD. MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min Drain-source breakdown voltage VGS=0V, ID=250μA VBR(DSS) 60 Gate-threshold voltage VDS=VGS, ID=250μA Vth(GS) 1 Gate-body leakage VDS=0V, VGS=±20V Zero gate voltage drain current On-state drain current V IGSS ±80 nA VDS=60V, VGS=0V IDSS 80 nA VGS=10V, VDS=7V ID(ON) RDS(ON) VDS=10V, ID=200mA gfs 1.6 500 mA 0.9 5 1.1 7 Ω VGS=5V, ID=50mA 80 VGS=10V, ID=500mA mS 3.75 VDS(ON) Drain-source on-voltage V VGS=5V, ID=50mA IS=115mA, VGS=0V Input capacitance * Output capacitance * Unit V VGS=10V, ID=500mA Diode forward voltage Max 2.5 Drain-source on resistance Forward trans conductance Typ VDS=25V, VGS=0V, f=1MHz Reverse transfer capacitance * 0.375 VSD 0.55 1.2 Ciss 50 Coss 25 Crss 5 td(on) 20 td(off) 40 V pF Switching Time Turn-on time * Turn-off time * VDD=25V, RL=50Ω, ID=500mA, VGEN=10V, RG=25Ω nS Note: * These parameters have no way to verify Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 2 Comchip Technology CO., LTD. MOSFET RATING AND CHARACTERISTIC CURVES (2N7002W-G) Fig.1 - Output Characteristics Fig.2 - Transfer Characteristics 1.0 1.4 Ta = 25°C Pulsed 1.2 VGS = 10V, 9V, 8V, 7V, 6V Ta = 25°C Pulsed VGS = 5V 1.0 Drain Current, ID (A) Orain Current, ID (A) 0.8 0.8 VGS = 4V 0.6 0.4 0.6 0.4 0.2 VGS = 3V 0.2 0 0 0 1 3 2 0 5 4 Drain To Source Voltage, VDS (V) 2 4 Fig.3 - RDS(ON) ─ ID Fig.4 - RDS(ON) ─ VGS 3 6 Ta = 25°C Pulsed Ta = 25°C Pulsed On-Resistance, RDS(ON) (Ω) On-Resistance, RDS(ON) (Ω) 6 Gate to Source Voltage, VGS (V) 2 VGS = 5V 1 VGS = 10V 0 0.0 4 ID = 500mA ID = 50mA 2 0 0.2 0.6 0.4 0.8 1.0 0 Drain Curret, ID (A) 6 12 18 Gate to Source Voltage, VGS (V) Fig.5 - IS ─ VSD 2.00 Ta = 25°C Pulsed Source Current, IS (A) 1.00 0.10 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source To Drain Voltage, VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 3 Comchip Technology CO., LTD. MOSFET Reel Taping Specification P1 F E d P0 XXX 1 W B 3 2 C A P 12 o 0 D2 Trailer Tape 50±2 Empty Pockets SOT-323 SOT-323 D1 D Leader Tape 100±2 Empty Pockets Components SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.05 2.55 ± 0.05 1.19 ± 0.05 1.55 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.089 ± 0.002 0.100 ± 0.002 0.047 ± 0.002 0.061 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 4 Comchip Technology CO., LTD. MOSFET Marking Code 3 Marking Code Part Number 2N7002W-G K72 K72 1 2 Suggested PAD Layout B SOT-323 SIZE (mm) (inch) A 0.80 0.031 B 0.50 0.020 C 1.30 0.051 D 2.20 0.087 A D C Standard Packaging REEL PACK Case Type SOT-323 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 5 Comchip Technology CO., LTD.
2N7002W-G 价格&库存

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