A2N7002H-HF

MOSFET A2N7002H-HF N-Channel RoHS Device Halogen Free Features - Low on-resistance. - ESD protected gate up to 2KV HBM. SOT-23 - High-speed switching. 0.122(3.10) 0.106(2.70) - Drive circuits can be simple. 1 : Gate 2 : Source 3 : Drain 3 - Parallel use is easy. 0.059(1.50) 0.043(1.10) - AEC-Q101 Qualified. 1 2 0.079(2.00) 0.071(1.80) Mechanical data 0.006(0.15) 0.002(0.05) - Case: SOT-23, molded plastic. - Molding compound, UL flammability classification rating 94V-0. - Terminals: Matte tin plated leads, solderable per MIL-STD-202, method 208. 0.102(2.60) 0.087(2.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) Circuit Diagram 0.004(0.10) 0.001(0.02) 0.019(0.48) 0.014(0.35) Dimensions in inches and (millimeter) Drain Gate Source Maximum Rating (at T =25°C unless otherwise noted) A Symbol Value Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous drain current ID 300 mA Pulsed drain current (Note 4) tp = 10µs IDM 2000 mA Power dissipation PD 0.35 W Thermal resistance junction to ambient air RθJA 357 °C/W Thermal resistance junction to lead RθJL 234 °C/W Thermal resistance junction to case RθJC 195 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Parameter Operating junction temperature range Storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 AQW-JTR09 Comchip Technology CO., LTD. MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Unit Off Characteristics Drain-source breakdown voltage VDSS VGS = 0V, ID = 250µA Drain-source leakage current IDSS VDS = 60V, VGS = 0V 1 µA Gate-body leakage IGSS VGS = ±20V, VDS = 0V ±10 µA Static drain-source on resistance RDS(ON) VGS = 5V, ID = 0.05A VGS = 10V, ID = 0.5A 1.5 1.45 3 2.5 Ω Gate threshold voltage VGS(th) VDS = VGS, ID = 250µA 1.5 2.5 V 60 V On Characteristics (Note 2) 1 Dynamic Characteristics (Note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 41 VGS = 0V, VDS = 20V, f = 1MHZ pF 15 4 Switching Characteristics (Note 3) Turn-on delay time td(on) 6 VDD = 30V, ID = 0.2A, tr Turn-on rise time 5 VGS = 10V, RG = 25Ω, Turn-off delay time td(off) nS 25 RL = 150Ω tf Turn-off fall time 15 Drain-Source Diode Characteristics Diode forward voltage (Note 1) VSD Diode continuous forward current IS IS = 0.3A, VGS = 0V TC =25°C 0.85 1.2 V 0.3 A Notes: 1. Surface mounted on FR4 board, t ≤ 10 sec. 2. Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Guaranteed by design, not subject to production. 4. Pulse width limited by maximum junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 AQW-JTR09 Comchip Technology CO., LTD. MOSFET Rating and Characteristic Curves (A2N7002H-HF) Fig.1 - On-Region Characteristics Fig.2 - On-Resistance vs. Drain Current and Gate Voltage 3 VGS=4V, 4.5V, 5V, 5.5V, 6V, 8V, 10V Drain Current, ID (A) 0.8 0.6 0.4 VGS=3V 0.2 0 0 1 2 3 4 5 On Resistance, RDS(ON) (Ω) 1 2.5 VGS=5V 2 1 0.5 0 6 VGS=10V 1.5 0.2 0.4 0.6 0.8 1 Drain-Source Voltage, VDS (V) Drain Current, ID (A) Fig.3 - On-Resistance vs. Gate-Source Voltage Fig.4 - Gate Voltage vs. Junction Temperature 1.6 8 ID=250µA Threshold Voltage, VTH On Resistance, RDS(ON) (Ω) 1.4 6 4 ID=500mA 2 1.2 1.0 0.8 0.6 0.4 0.2 ID=50mA 0 2 4 6 8 0 10 25 50 75 100 125 150 Gate-Source Voltage, VGS (V) Junction Temperature, Tj (°C) Fig.5 - On Resistance vs. Junction Temperature Fig.6 - Capacitance Characteristics 60 4 3 Capacitance, C (pF) On Resistance, RDS(ON) (mΩ) f=1MHz 50 VGS=10V IDs=500mA VGS=5V IDs=50mA 2 1 ciss 40 30 20 coss 10 crss 0 25 50 75 100 125 150 0 0 Junction Temperature, Tj (°C) 10 20 30 40 Drain-Source Voltage, VDS (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 AQW-JTR09 Comchip Technology CO., LTD. MOSFET Reel Taping Specification d P0 P1 E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 50±2 Empty Pockets Start 100±2 Empty Pockets Direction of Feed SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 1.00 54.00 ± 0.50 13.00 ± 0.50 (inch) SOT-23 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.039 2.126 ± 0.020 0.512 ± 0.020 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 + 0.30 − 0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 + 0.012 0.374 ± 0.039 − 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 AQW-JTR09 Comchip Technology CO., LTD. MOSFET Marking Code Part Number Marking Code 3 A2N7002H-HF 7002K 7002K 1 2 Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.90 0.035 B 0.80 0.031 C 0.95 0.037 D 2.00 0.079 E 2.90 0.114 A D C E C Note: 1. The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size (pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 AQW-JTR09 Comchip Technology CO., LTD.