ABC856BW-HF

General Purpose Transistor ABC856AW-HF Thru. ABC858CW-HF (PNP) RoHS Device Halogen Free Features - For AF input stages and driver applications. SOT-323 1 :Base 2 :Emitter 3 :Collector - High current gain. - Low collector-emitter saturation voltage. 0.087(2.20) 0.079(2.00) - Low noise between 30Hz and 15kHz. 3 - AEC-Q101 Qualified. 0.053(1.35) 0.045(1.15) 1 2 0.055(1.40) 0.047(1.20) Mechanical data - Case: SOT-323, molded plastic. 0.006(0.15) 0.002(0.05) 0.004(0.10) 0.001(0.02) 0.094(2.40) 0.087(2.20) 0.043(1.10) Circuit Diagram 0.035(0.90) 0.014(0.35) 3 Collector 0.006(0.15) 1 Base 0.016(0.40) 0.010(0.25) Dimensions in inches and (millimeter) 2 Emitter Maximum Ratings (Ta=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-base voltage ABC856W-HF ABC857W-HF ABC858W-HF VCBO -80 -50 -30 V Collector-emitter voltage ABC856W-HF ABC857W-HF ABC858W-HF VCEO -65 -45 -30 V VEBO -5 V Collector current-continuous IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Collector dissipation PC 200 mW TJ, TSTG -65 to +150 °C Emitter-base voltage Junction and storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 AQW-JTR10 Comchip Technology CO., LTD. General Purpose Transistor Electrical Characteristics (Ta= 25°C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Collector-base breakdown voltage ABC856W-HF ABC857W-HF ABC858W-HF V(BR)CBO IC = -10μA, IE = 0 -80 -50 -30 V Collector-emitter breakdown voltage ABC856W-HF ABC857W-HF ABC858W-HF V(BR)CEO IC = -10mA, IB = 0 -65 -45 -30 V V(BR)EBO IE = -1μA, IC = 0 -5 V Emitter-base breakdown voltage Collector cut-off current ICBO VCB = -30V, IE = 0 -15 nA Emitter cut-off current IEBO VEB = -5V, IC = 0 -0.1 µA DC current gain ABC856AW, 857AW, 858AW ABC856BW, 857BW, 858BW ABC857CW, 858CW hFE VCE = -5V, IC = -10μA DC current gain ABC856AW, 857AW, 858AW ABC856BW, 857BW, 858BW ABC857CW, 858CW hFE VCE = -5V, IC = -2mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE(on) Transition frequency fT 140 250 480 125 220 420 180 290 520 250 475 800 IC= -10mA , IB = -0.5mA -0.075 -0.3 IC= -100mA , IB = -5mA -0.25 -0.65 IC = -10mA, IB = -0.5mA -0.7 IC = -100mA, IB = -5mA -0.85 V IC = -2mA, VCE = 5V -0.6 -0.75 IC = -10mA, VCE = 5V - -0.82 VCE = -5V, IC = -20mA, f = 100MHZ V 250 V MHZ Collector-base capacitance Ccb VCB = -10V, f = 1MHZ 3 5 pF Emitter-base capacitance Ceb VEB = -0.5V, f = 1MHZ 10 15 pF Rating and Characteristic Curves (ABC856AW-HF Thru. ABC858CW-HF) Fig.1 - Total Power Dissipation Fig.2 - Collector-Base Capacitance Emitter-Base Capacitance 12 250 10 CCBO (CEBO), (pF) 300 Ptot, (mW) 200 150 100 50 0 8 CEB 6 4 CCB 2 0 20 40 60 80 100 120 150 0 TS, (°C) VCBO (VEBO), (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 AQW-JTR10 Comchip Technology CO., LTD. General Purpose Transistor Rating and Characteristic Curves (ABC856AW-HF Thru. ABC858CW-HF) Fig.3 - Transition Frequency Fig.4 - Collector Cutoff Current VCE=5V VCB=30V ICBO, (nA) fT, (MHz) max 10² 10² typ 10² 0 50 100 IC, (mA) TA, (°C) Fig.5 - Collector-Emitter Saturation Voltage Fig.6 - DC Current Gain 150 10² 100°C C 0° -5 °C 25 25°C C 0° 10 hFE=20 -50°C hFE IC, (mA) 10² VCE=5V 0 0.1 0.3 0.2 0.4 0.5 10² IC, (mA) VCEsat, (V) Fig.7 - Base-Emitter Saturation Voltage 10² IC, (mA) hFE=20 100°C 0 0.2 0.4 25°C 0.6 -50°C 0.8 1.0 1.2 VBEsat, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 AQW-JTR10 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P0 d P1 E F W B C A P 12 o 0 D2 D1 D W1 SOT-323 SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.10 2.55 ± 0.10 1.20 ± 0.10 1.50 ± 0.10 178.00 ± 1.00 54.00 ± 0.50 13.00 ± 0.50 (inch) SOT-323 0.089 ± 0.004 0.100 ± 0.004 0.047 ± 0.004 0.059 ± 0.004 7.008 ± 0.039 2.126 ± 0.020 0.512 ± 0.020 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 + 0.30 − 0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 + 0.012 0.374 ± 0.039 − 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 AQW-JTR10 Comchip Technology CO., LTD. General Purpose Transistor Marking Code Part Number Marking Code 3 ABC856AW-HF 3A ABC857AW-HF 3E XX ABC858AW-HF 3J ABC856BW-HF 3B ABC857BW-HF 3F ABC858BW-HF 3K ABC857CW-HF 3G ABC858CW-HF 3L 1 2 xx = Product type marking code Suggested P.C.B. PAD Layout B SOT-323 SIZE A (mm) (inch) 0.90 0.035 A D B 0.70 0.028 C 1.30 0.051 D 1.90 0.075 C Note: 1.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOT-323 REEL Reel Size (pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 AQW-JTR10 Comchip Technology CO., LTD.