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B1SGS

B1SGS

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    B1SGS - SMD Genenal Purpose Bridge Rectifier - Comchip Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
B1SGS 数据手册
SMD Genenal Purpose Bridge Rectifier COMCHIP www.comchip.com.tw B 05SGS T hru B10S GS G lass Passivated Type Reverse Voltage: 50 - 1000 Volts Forward Current: 0.5 Amp F eatures I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Built-in strain relief Glas passivated junction TO-269AA Mechanical data C ase: JEDEC DO-269AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Marked on body Mounting position: Any Approx. Weight:0.22 gram Dimension in inches and (millimeters) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 0.5 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=125 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol B 05S GS B 1S GS B 2S GS B 4S GS V RRM V DC V RMS I FSM 50 50 35 100 100 70 200 200 140 400 400 280 B 6S GS B 8S GS B 10S GS 600 600 420 8 00 800 560 1000 1000 700 U nit V V V A 30 Io VF IR R 0.5 1.0 A V uA 5 500 85 -55 to +150 -55 to +150 JA C /W C C Tj T STG Note 1: Thermal resistance from junction to ambient. M DS0212005A Page 1 SMD Genenal Purpose Bridge Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (B05SGS thru B10SGS) Fig. 1 - Reverse Characteristics 1 00 F ig.2 - Forward Characteristics 1 00 Reverse Current ( uA ) Forward Current ( A ) 10 10 1.0 1.0 0.1 0.1 Tj=25 C 0.01 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Non Repetitive Forward Surge Current 50 0 .7 8.3mS Single Half Sine Wave JEDEC methode Fig. 4 - Current Derating Curve Peak Surge Forward Current ( A ) 40 Average Forward Current ( A ) 0.6 0.5 0.4 0.3 0.2 0.1 0 S ingle Phase Half wave 60Hz Resistive or inductive Load 30 Tj=25 C 20 10 0 1 5 10 50 1 00 0 25 50 75 100 125 150 175 Number of Cycles at 60Hz Ambient Temperature ( C) MDS0212005A Page 2
B1SGS
1. 物料型号: - B05SGS、B1SGS、B2SGS、B4SGS、B6SGS、B8SGS、B10SGS

2. 器件简介: - 这些器件是SMD(表面贴装)通用桥式整流器,适用于表面贴装应用,易于拾取和放置。塑料封装具有UL 94V-0的阻燃等级,内置的应变消除和玻璃钝化结。

3. 引脚分配: - 根据JEDEC DO-269AA标准,封装为模塑塑料,引脚可焊性符合MIL-STD-750方法2026,极性标记在本体上,可任意位置安装。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50-1000伏特 - 最大直流阻断电压(VDc):50-1000伏特 - 最大RMS电压(VRMS):35-700伏特 - 峰值浪涌正向电流(IFSM):对于B4SGS为30安培 - 最大平均正向电流(Io):对于B4SGS为0.5安培 - 最大瞬时正向电流在0.5A时(VF):对于B4SGS为1.0伏特 - 最大直流反向电流在额定直流阻断电压下(IR):对于B4SGS为5毫安培

5. 功能详解: - 这些桥式整流器能够在正向电流下导通,在反向电压下阻断电流,具有高耐压和高电流承受能力。

6. 应用信息: - 适用于需要高耐压和高电流的整流应用,如电源、电机控制等。

7. 封装信息: - 封装类型为TO-269AA,重量约为0.22克。
B1SGS 价格&库存

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