BAS16

Surface Mount Switching Diode COMCHIP www.comchip.com.tw BAS16 Voltage: 75 Volts Current: 200mA Features F ast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 Mechanical data C ase: SOT -23, Plastic Terminals : Solderable per NIL-STD -202, method 208 Approx. Weight: 0.008 gram 1 2 .006 (0.15)max. .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .020 (0.5) .020 (0.5) 3 CATHODE 1 ANODE .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MDS0212004A Page 1 .044 (1.10) .035 (0.90) Surface Mount Switching Diode Characteristic Symbol Min COMCHIP w ww.comchip.com.tw ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) 1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. IR — — — V(BR) VF — — — — CD VFR trr QS — — — — 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 — Vdc mV µAdc MDS0212004A Page 2 Surface Mount Switching Diode Rating and Characteristic Curves (BAS16) 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR Input Signal 90% IR IF 0.1 µF tr 10% tp t IF COMCHIP w ww.comchip.com.tw trr t IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85°C 10 TA = – 40°C IR , Reverse Current (µA) 10 TA = 150°C TA = 125°C IF, Forward Current (mA) (mA) 1.0 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 1.2 0.001 0 10 20 30 VR, Reverse Voltage (V) 40 50 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2 4 VR, Reverse Voltage (V) 6 8 Figure 4. Capacitance MDS0212004A Page 3