BAW56W

Surface Mount Switching Diode Features COMCHIP w ww.comchip.com.tw Voltage: BAV99W T hru BAW56 W Current: 70 Volts 215mA Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertio For General Purpose Switching Applications High Conductance SOT-323 .087 (2.2) .070 (1.8) .016 (.40) Mechanical data Case: SOT - 3 23, Plastic Approx. Weight: 0.008 gram This diodes is also available in other configurations including a dual common cathode with type designation BAV70 W , a dual common anodes with type designation BAW56 and single chip inside with type Designation BAL99 W Top View .054 (1.35) .045 (1.15) 3 1 2 .004 (0.1) max. CATHODE 1 3 3 ANODE 2 CATHODE ANODE ANODE 2 CATHODE CATHODE ANODE CATHODE 1 ANODE 1 2 CATHODE .016 (.40) .016 (.40) max. .087 (2.2) .078(2. 0) 3 CATHODE 3 2 ANODE Dimensions in inches (millimeters) BAV70W Maximum Ratings Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current BAW56W Symbol VR IF IFM(surge) Value 70 215 500 Units VDC mAdc mAdc Thermal Characteristics Characteristic Total Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R JA Max 225 1.8 556 300 2.4 417 –55 to +150 Units mW mW/°C °C/W mW mW/°C °C/W °C PD R JA TJ, Tstg Electrical Characterics (TA = 25°C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I(BR) = 100 uAdc ) Reverse Voltage Leakage Current VR = 25 Vdc, TJ = 150°C V R = 70 Vdc V R = 70 Vdc, TJ = 150°C Diode Capacitance (VR = 0, f = 1.0 MHz)) Forward Voltage I F = 1.0 mAdc I F = 10 mAdc I F = 50 mAdc I F = 150 mAdc Reverse Recovery Time (IF = IR = 10 mAdc, I R(REC) = 1.0mAdc) RL = 100 1.FR–5 = 1.0 X 0.75X 0.062 in. MDS0302003A Symbol V(BR) IR CD Min 70 - Max 30 2.5 50 1.5 715 855 1000 1250 6.0 VF - Trr 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum. Page 1 .044 (1.10) .035 (0.90) 1 .006 (0.15) .002 (0.05) BAV99W ANODE BAL99W .056(1.4) .047(1.2) Units Vdc uAdc pF mV nS Surface Mount Switching Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (BAV99W Thru BAW56W) 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR 0.1 µF tr tp 10% t IF trr t IF 90% IR Input Signal IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85°C 10 10 TA = 150°C IF, Forward Current (mA) (mA) 1.0 TA = 125°C TA = – 40°C IR , Reverse Current (µA) 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 1.2 0.001 0 10 20 30 VR, Reverse Voltage (V) 40 50 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2 4 VR, Reverse Voltage (V) 6 8 Figure 4. Capacitance MDS0302003A P age 2