0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CDBA1100GS

CDBA1100GS

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CDBA1100GS - SMD Schottky Barrier Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CDBA1100GS 数据手册
SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw C DBA120 Thru CDBA1100 GS R everse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp F eatures DO-214AC (SMA) I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Built-in strain relief Low forward voltage drop 0.067(1.70) 0.051(1.29) 0.180(4.57) 0.160(4.06) 0.110(2.79) 0.086(2.18) Mechanical data 0.090(2.29) 0.067(1.70) 0.012(0.31) 0.006(0.15) C ase: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. weight:0.064 gram 0.059(1.50) 0.035(0.89) 0.209(5.31) 0.185(4.70) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) R R Operating Junction Temperature Storage Temperature Tj T STG JA JL Symbol V RRM V DC V RMS I FSM CDBA120 GS CDBA140 GS CDBA160 GS CDBA180 GS C DBA1100 GS U nit V V V A 20 20 14 40 40 28 60 60 42 80 80 56 100 100 70 35 Io VF IR 10 0.50 1.0 0.70 0.85 A V . mA 0.5 5 88 C/W 20 -50 to +125 -65 to +150 C C Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas M DS0208007C Page 1 SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CDBA120GS Thru CDBA1100GS) Fig. 1 - Reverse Characteristics 100 100 F ig.2 - Forward Characteristics CDBA120-140 GS R everse Current ( mA ) Forward Current ( A ) 10 10 CDBA160 GS CDBA180-1100 GS 1 1 Tj=75 C 0.1 0.1 Tj=25 C 0.01 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0 20 40 60 80 100 120 140 160 180 200 0 .1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Forward Voltage (V) 1.9 2.1 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 350 300 J unction Capacitance (pF) = 1MHz and applied 4VDC reverse voltage Fig. 4 - Current Derating Curve 250 200 150 100 50 0 0.01 0.1 1.0 10 100 Average Forward Current ( A ) 1.2 1.0 CD 0.8 0.6 BA CD BA 12 0-1 40 16 10 0-1 0G S 0.4 0.2 0 20 40 60 80 100 Reverse Voltage (V) Ambient Temperature ( C) GS 120 140 160 Fig. 5 - Non repetitive forward surge current Peak surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 0 1 5 10 50 1 00 Number of Cycles at 60Hz MDS0208007C Page 2
CDBA1100GS 价格&库存

很抱歉,暂时无法提供与“CDBA1100GS”相匹配的价格&库存,您可以联系我们找货

免费人工找货