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CDBB1100

CDBB1100

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CDBB1100 - SMD Schottky Barrier Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CDBB1100 数据手册
S MD Schottky Barrier Rectifier SMD COMCHIP www.comchip.com.tw C DBB120 Thru CDBB1100 R everse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data C ase: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.012(0.31) 0.006(0.15) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) R R Operating Junction Temperature Storage Temperature Tj T STG JA JL Symbol V RRM V DC V RMS I FSM CDBB120 CDBB140 CDBB160 CDBB180 CDBB1100 U nit V V V A 20 20 14 40 40 28 60 60 42 80 80 56 100 100 70 35 Io VF IR 10 0.50 1.0 0.70 0.85 A V . mA 0 .5 5 80 C/W 20 -50 to +125 -65 to +150 C C Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas M DS0211004A Page 1 S MD Schottky Barrier Rectifier SMD COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CDBB120 Thru CDBB1100) Fig. 1 - Reverse Characteristics 100 100 CDBB120-140 F ig.2 - Forward Characteristics R everse Current ( mA ) Forward Current ( A ) 10 10 CDBB160 CDBB180-1100 1 1 Tj=75 C 0.1 0.1 Tj=25 C Pulse width 300uS 4% duty cycle Tj=25 C 0.01 0.01 0 20 40 60 80 100 120 140 160 180 200 0 .1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Forward Voltage (V) 1.9 2.1 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 1000 = 1MHz and applied 4VDC reverse voltage Fig. 4 - Current Derating Curve Average Forward Current ( A ) 1.2 1.0 CD J unction Capacitance (pF) 0.8 0.6 0.4 0.2 0 BB CD 100 16 BB 12 014 0 00 11 0 10 0.1 1.0 10 100 20 40 60 80 100 120 140 160 Reverse Voltage (V) Ambient Temperature ( C) Fig. 5 - Non repetitive forward surge current Peak surge Forward Current ( A ) 50 40 30 8.3mS Single Half Sine Wave JEDEC methode Tj=25 C 20 10 0 1 5 10 50 1 00 N umber of Cycles at 60Hz M DS0211004A Page 2
CDBB1100 价格&库存

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