CDBB5100-G

SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBB540-G Thru. CDBB5100-G Reverse Voltage: 40,60,100 Volts Forward Current: 5.0 Amp RoHS Device Features -Batch process design, excellent powe dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 SMB-1 0.213(5.4) 0.197(5.0) 0.016(0.4) Typ. 0.142(3.6) 0.126(3.2) 0.168(4.2) 0.150(3.8) Mechanical data -Case: Molded plastic, JEDEC SMB. -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.09 gram(approx.). 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040(1.0) Typ. Dimensions in inches and (millimeter) Maximum Ratings(at TA=25°C unless otherwise noted) Parameter Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM @TA=25°C @TA=125°C Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature Note 1: f=1MHz and applied 4V DC reverse voltage. Symbol VRRM VRMS VR VF IO IFSM IR RθJA CJ TJ TSTG CDBB540-G 40 28 40 0.55 CDBB560-G 60 42 60 0.75 5.0 150 0.5 50 12 380 CDBB5100-G 100 70 100 0.85 Unit V V V V A A mA °C/W pF -55 to +150 -55 to +125 -65 to +175 °C °C REV:A QW-BB028 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CDBB540-G Thru. CDBB5100-G) Fig.1 Reverse Characteristics 100 100 56 BB CD Fig.2 Forward Characteristics -G 0- G 40 BB 5 IR, Reverse Current (mA) ΙF, Forward Current (A) CD 10 10 C 1 B5 DB 00 -G 1 TJ=75°C 1 0.1 TJ=25°C 0.1 0.01 0 40 80 120 160 200 0.01 0.1 0.5 0.9 1.3 1.7 2.1 Percent of Rated Peak Reverse Voltage (%) VF, Forward Voltage (V) Fig.3 Junction Capacitance 1400 7 Fig.4 Current Derating Curve CJ, Junction Capacitance (pF) 1200 1000 800 600 400 200 0 0.01 IO, Average Forward Current (A) f=1MHz Applied 4VDC reverse voltage 6 5 4 CD CD 5 BB 5 BB 3 2 1 0 60 40 -G .C -G 1 B5 DB 00 -G 0.1 1 10 100 20 40 60 80 100 120 140 160 VR, Reverse Voltage (V) TA, Ambient Temperature (°C) Fig.5 Non-repetitive Forward Surge Current 150 IFSM, Peak Forward Surge Current (A) TJ=25°C 8.3ms single half sine wave, JEDEC method 120 90 60 30 0 1 10 100 Number of Cycles at 60Hz REV:A QW-BB028 Page 2 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 3.81 ± 0.10 0.150 ± 0.04 B 5.74 ± 0.10 0.226 ± 0.04 C 2.24 ± 0.10 0.088 ± 0.04 d 1.50 ± 0.10 0.059 ± 0.004 D 330 ± 2.00 12.99 ± 0.079 D1 50.0 MIN. 1.969 MIN. D2 13.0 ± 0.50 0.512 ± 0.020 SMB (mm) (inch) SYMBOL E 1.75 ± 0.10 0.689 ± 0.004 F 5.50 ± 0.10 0.217 ± 0.004 P 8.00 ± 0.10 0.315± 0.004 P0 4.00 ± 0.10 0.157 ± 0.004 P1 2.00 ± 0.10 0.079 ± 0.004 T 0.23 ± 0.10 0.009 ± 0.004 W 12.0 ± 0.30 0.472 ± 0.012 W1 18.0 ± 1.00 0.709 ± 0.040 SMB (mm) (inch) REV:A QW-BB028 Page 3 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers SMD Diodes Specialist Marking Code Part Number CDBB540-G CDBB560-G CDBB5100-G Marking Code SS54 SS56 SS510 XXX Suggested PAD Layout SMB SIZE (mm) A B C D E 4.50 1.50 3.60 6.00 3.00 (inch) 0.177 0.059 0.142 0.236 B D A E C 0.118 Standard Package Qty per Reel Case Type (Pcs) SMB 4000 Reel Size (inch) 13 REV:A QW-BB028 Page 4 Comchip Technology CO., LTD.