CDBD2SC21200-G

Silicon Carbide Power Schottky Diode CDBD2SC21200-G Reverse Voltage: 1200V Forward Current: 2A RoHS Device Features TO-263/D2PAK - Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.402(10.20) 0.394(10.00) 0.185(4.70) 0.177(4.50) 0.051(1.30) 0.043(1.10) 3 0.596(15.15) 0.585(14.85) 0.346(8.80) 0.339(8.60) 1 Circuit diagram 2 0.205(5.20) 0.197(5.00) 0.107(2.72) 0.091(2.32) 0.019(0.47) 0.014(0.37) 0.063(1.60) 0.055(1.40) 0.049(1.25) 0.045(1.15) C(3) 0.054(1.37) 0.046(1.17) 0.037(0.95) 0.033(0.85) Dimensions in inches and (millimeters) C(1) A(2) Maximum Ratings (at TA=25°C, unless otherwise noted) Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Surge peak reverse voltage VRSM 1200 V DC bolcking voltage VDC 1200 V Parameter Conditions Continuous forward current TC = 25°C TC = 135°C TC = 155°C Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation 6.2 IF 3.2 2 A Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 15 A Tc = 25°C, tp = 10ms Half sine wave IFSM 35 A 53.2 TC = 25°C PTOT 23 TC = 110°C Typical thermal resistance Junction to case RθJC 2.82 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Operating junction temperature range Storage temperature range W Company reserves the right to improve product design , functions and reliability without notice. REV: QW-BSCXX Page 1 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Symbol Conditions IF = 2A, Tj = 25°C Forward voltage VF IF = 2A, Tj = 175°C VR = 1200V, Tj = 25°C Reverse current IR VR = 1200V, Tj = 175°C VR = 800V, Tj = 150°C QC = ∫ C(V) dv Total capacitive charge Min. QC VR Typ. Max. 1.62 1.7 2.8 3 20 100 30 200 Unit V μA nC 12 0 VR = 0V, Tj = 25°C, f = 1MHZ Total capacitance VR = 400V, Tj = 25°C, f = 1MHZ C VR = 800V, Tj = 25°C, f = 1MHZ 136 150 12 13 11 12 pF RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 0.014 5° C Reverse Current, IR (mA) 25 °C 0.012 2.5 TJ =1 7 Forward Current, IF (A) 3.0 TJ =1 TJ= 25 °C TJ =7 5° C 3.5 2.0 1.5 1.0 0.010 TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0.008 0.006 0.004 0.002 0.5 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 200 400 Forward Voltage, VF (V) Fig.3 - Current Derating Capacitance Between Terminals, CJ (pF) 22 Forward Current, IF (A) 18 10% Duty 14 12 10 30% Duty 8 6 4 50% Duty 2 70% Duty DC 0 25 50 75 100 125 800 1000 1200 1400 Fig.4 - Capacitance VS. Reverse Voltage 20 16 600 Reverse Voltage, VR (V) 150 175 160 140 120 100 80 60 40 20 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV: QW-BSCXX Page 2 Comchip Technology CO., LTD.