CDBD8060-G

Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device TO-263/D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to 0.413(10.50) 0.394(10.00) 0.059(1.50) 0.031(0.80) optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) 4 0.370(9.40) 0.327(8.30) 1 2 3 0.114(5.30) 0.098(4.40) MIL-STD-19500 /228 0.205(5.20) 0.189(4.80) Mechanical data -Epoxy: U/L 94-V0 rate flame retardant. -Case: TO-263/D2PAK, Transfer Molded. -Terminals: Solderable per MIL-STD-202, 2=4 0.024(0.60) 0.014(0.35) 0.063(1.60) 0.055(1.30) 0.106(2.70) 0.091(2.30) Dimensions in inches and (millimeters) method 208. -Polarity: As marked. -Weunting Position: Any -Weight:1.46 gram(approx.). 3 Maximum Ratings (At Ta=25 O C, unless otherwise noted) Symbol CDBD 8060-G CDBD 8100-G Unit Maximum Recurrent peak reverse voltage VRRM 60 100 V Maximum RMS voltage VRMS 42 70 V Maximum DC blocking voltage VDC 60 100 V Parameter Forward rectified current (See fig. 1) IO Maximum forward voltage at IO VF Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 175 A Maximum Reverse current at 25°C per leg (Note1) IR 5.0 mA Maximum Reverse current at 100°C per leg (Note1) IR 50 mA Typical Thermal resistance junction to case Per Leg RθJC 4.0 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Operating temperature range Storage temperature range 8.0 0.75 A 0.85 V Notes: 1. Pulse Test: 300µS pulse width, 1% duty cycle. REV:A Page 1 QW-BB047 Comchip Technology CO., LTD. Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (CDBD8060-G Thru. CDBD8100-G) FIG.1- Forward Derating Curve FIG.2-Peak Forward Surge Current 300 8 Peak Forward Surge Current ,(A) Average Firward Rectified Current ,(A) 9 7 6 5 4 3 2 250 200 150 100 50 1 0 0 20 40 60 80 0 100 120 140 160 180 200 1 10 100 Case Temperature, (°C) Number of Cycles at 60Hz FIG.3-Typical Forward Characteristic Per Leg FIG.4-Typical Reverse Characteristics 100 10 Instantaneous Reverse Current, (mA) Instantaneous Forward Current, ( A ) TJ=125 °C CDBD8060-G 10 CDBD8100-G 1.0 1.0 TJ=75 °C 0.1 TJ=25 °C 0.01 CDBD8060-G CDBD8100-G 0.1 0.1 0.3 0.5 0.7 0.9 Instantaneous Forward Voltage, ( V ) 1.1 0.001 0 20 40 60 80 100 120 140 Peraent of Rated Voltage Peak Reverse Voltage, (%) REV:A Page 2 QW-BB047 Comchip Technology CO., LTD. Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist Marking Code Marking Code Part Number CDBD8060-G SD8L60 CDBD8100-G SD8L100 XXXXXX XXXXXX / XXXXXXX = Product type marking code Suggested PAD Layout TO-263 / D2PAK X1 SIZE (mm) (inch) A 9.50 0.374 B 2.50 0.098 C 16.90 0.665 Y1 C A X1 10.80 0.425 X2 1.10 0.043 Y1 11.40 0.449 Y2 3.50 0.138 Y2 X2 B Standard Packaging TUBE PACK Case Type TO-263 / D2PAK TUBE BOX ( pcs ) ( pcs ) 50 2,000 REV: A Page 3 QW-BB047 Comchip Technology CO., LTD.