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CDBD835L

CDBD835L

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CDBD835L - SMD Schottky Barrier Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CDBD835L 数据手册
SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw C DBD835L R everse Voltage: 35 Volts Forward Current: 8.0 Amp 2 F eatures TO-252AA (D-PAK) L ead formed for surface mount Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Low Switching Noise Low forward voltage drop D IM A B C D E F G H Min. 5 .40 6.30 2.20 5.20 8.00 6.60 2.40 0.90 0.45 0.45 0.90 0.70 0.50 0.60 2.70 5.00 4.80 Max. 5.60 6.70 2.40 5.50 10.00 7.00 3.00 1.50 0.55 0.60 1.50 0.90 0.70 0.90 3.10 5.40 5.20 2.30 Mechanical data C ase: TO-252AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Mounting position: Any Approx. Weight: 0.295 gram Unit: Millmeters I J K L M N P Q S T V X 1.20 0.80 1.40 1.20 Maximum Ratings and Electrical Characterics P arameter Max.Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Average Rectifier Forward Current (Note 1) Peak Repetitive Foward Current (at Rated V R , Square Wave, 20KHz, Tc=80 C) Max. Instantaneous Forward Current at 8.0 A (Note 2) Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 3) Operating Junction temperature Storage Temperature Symbol V RRM V DC V RMS I FSM C DBD835 U nit V V V 35 35 24.5 75 A A A V A C /W I F(AV) I FRM VF IR 8.0 16 0.5 1 .4 35 80 6.0 -65 to +125 -65 to +150 R R JA JC Tj T STG C C N ote 1. Total deviceRated Vp at Tc=100 C 2. Pulse width = 300uS, duty cycle less than 2%. 3. Thermal resistance from junction to ambient and junction to case mounted on minimum pad size recommended M DS0211012A Page 1 SMD Schottky Barrier Rectifier Rating and Characteristic Curves (CDBD835L) Fig.1 - Reverse Characteristics 1 000 COMCHIP www.comchip.com.tw Fig. 2 - Forward Characteristics Tj=125 C 10 Reverse Current (mA ) 100 F orward Current ( A ) Tj=125 C 1 10 Tj=100 C 1 0.1 Tj=25 C Tj=25 C 0.01 0.1 0.01 0.001 0 5 10 15 20 25 30 35 0 0.1 0.2 0.3 0.4 0.5 0.6 R everse Voltage (Volts) Forward Voltage (Volts) Fig. 3 - Junction Capacitance 2 000 T j=25 C Fig. 4 - Current Derating Curve Junction Capacitance (pF) 1000 Average Forward Current ( A ) 1 .0 10 50 9.0 7.5 6.0 4.5 3.0 1.5 0 20 40 60 80 100 120 140 160 600 400 2 00 0 Reverse Voltage (V) Ambient Temperature ( C) M DS0211012A Page 2
CDBD835L 价格&库存

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