CDBDSC10650-G

Silicon Carbide Power Schottky Diode CDBDSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device Features Circuit Diagram D-PAK(TO-252) 0.264(6.70) 0.256(6.50) 0.091(2.32) 0.089(2.28) 0.215(5.46) 0.023(0.58) 0.018(0.46) 0.201(5.10) 3 0.012(0.30) Max. Φ 0.244(6.20) 0.236(6.00) 0.409(10.40) 0.394(10.00) - Rated to 650V at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.051(1.30) 0.043(1.10) 1 2 0.090(2.29) 0.035(0.89) C(3) 0.034(0.86) 0.026(0.66) 0.093(2.37) 0.085(2.16) 0.114(2.90) 0.100(2.55) 0.023(0.58) 0.016(0.43) Dimensions in inches and (millimeters) C(1) A(2) Maximum Ratings (at TA=25°C, unless otherwise noted) Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC bolcking voltage VDC 650 V IF 15 10 A Parameter Conditions Continuous forward current TC = 25°C TC = 135°C TC = 150°C Repetitive peak forward surge cruuent Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 50 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave IFSM 100 A Power dissipation Operating junction temperature range Storage temperature range 109 TC = 25°C TC = 110°C Typical thermal resistance 33 Junction to case PTOT W 48 RθJC 1.37 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV: Page 1 QW-BSCXX Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Symbol Conditions IF = 10A, Tj = 25°C Forward voltage VR = 650V, Tj = 25°C VR = 650V, Tj = 175°C VR = 400V, Tj = 150°C QC = ∫ C(V) dv Total capacitive charge 1.48 1.7 1.7 2.5 20 100 30 200 IR QC VR Unit Max. Typ. VF IF = 10A, Tj = 175°C Reverse current Min. V μA nC 36 0 VR = 0V, Tj = 25°C, f = 1MHZ Total capacitance VR = 200V, Tj = 25°C, f = 1MHZ 690 730 72 75 71 74 C VR = 400V, Tj=25°C, f=1MHZ pF RATING AND CHARACTERISTIC CURVES (CDBDSC10650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 13 0.088 TJ=25°C 12 0.08 10 Reverse Current, IR (mA) Forward Current, IF (A) 11 TJ=75°C 9 TJ=125°C 8 7 TJ=175°C 6 5 4 3 2 TJ=175°C 0.064 TJ=125°C 0.056 0.048 0.04 0.032 TJ=75°C 0.024 0.016 TJ=25°C 0.008 1 0 0 0.5 1 1.5 2 300 400 500 600 700 800 Fig.4 - Capacitance vs. Reverse Voltage Capacitance Between Terminals, CJ (pF) 10 90 % Du ty 80 70 3 0% 60 50% 40 Duty Duty 30 70% Duty DC 10 50 200 Fig.3 - Current Derating 110 0 25 100 Reverse Voltage, VR (V) 100 20 0 Forward Voltage, VF (V) 120 50 0 2.5 130 Forward Current, IF (A) 0.072 75 100 150 125 175 750 700 600 500 400 300 200 100 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 10000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV: Page 2 QW-BSCXX Comchip Technology CO., LTD.