CDBDSC8650-G

Silicon Carbide Power Schottky Diode CDBDSC8650-G Reverse Voltage: 650 V Forward Current: 8 A RoHS Device D-PAK(TO-252) Features 0.264(6.70) 0.256(6.50) 0.091(2.32) 0.089(2.28) 0.215(5.46) 0.023(0.58) 0.018(0.46) 0.201(5.10) 3 0.012(0.30) Max. Φ 0.244(6.20) 0.236(6.00) 0.409(10.40) 0.394(10.00) - Rated to 650V at 8 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.051(1.30) 0.043(1.10) 1 2 0.090(2.29) 0.035(0.89) Circuit Diagram 0.034(0.86) 0.026(0.66) 0.093(2.37) 0.085(2.16) 0.114(2.90) 0.100(2.55) 0.023(0.58) 0.016(0.43) C(3) Dimensions in inches and (millimeters) C(1) A(2) Maximum Ratings (at TA=25°C, unless otherwise noted) Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC bolcking voltage VDC 650 V Parameter Conditions Continuous forward current TC = 25°C TC = 135°C TC = 150°C Repetitive peak forward surge cruuent Non-repetitive peak forward surge current Power dissipation 11 8 A Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 50 A Tc = 25°C, tp = 10ms Half sine wave IFSM 100 A Operating junction temperature range Storage temperature range 102.4 TC = 25°C TC = 110°C Typical thermal resistance 25.5 IF Junction to case PTOT W 45 RθJC 1.465 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV: Page 1 QW-BSCXX Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Symbol Conditions IF = 8A, Tj = 25°C Forward voltage VR = 650V, Tj = 25°C VR = 650V, Tj = 175°C VR = 400V, Tj = 150°C QC = ∫ C(V) dv Total capacitive charge 1.45 1.7 1.75 2.5 10 100 15 200 IR QC VR Unit Max. Typ. VF IF = 8A, Tj = 175°C Reverse current Min. V μA nC 30 0 VR = 0V, Tj = 25°C, f = 1MHZ Total capacitance VR = 200V, Tj = 25°C, f = 1MHZ C 550 588 56.5 57 54 54.5 VR = 400V, Tj=25°C, f=1MHZ pF RATING AND CHARACTERISTIC CURVES (CDBDSC8650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 11 0.09 10 0.08 TJ=25°C Reverse Current, IR (mA) Forward Current, IF (A) 9 TJ=75°C 8 7 TJ=125°C 6 TJ=175°C 5 4 3 2 0.06 0.03 0.02 1 0 0.8 1.2 1.6 2.0 2.4 Capacitance Between Terminals, CJ (pF) % Du ty 60 50 30% D uty 50 % Duty 70% D uty DC 10 50 100 200 300 400 500 600 700 800 Fig.4 - Capacitance vs. Reverse Voltage 70 0 25 0 Fig.3 - Current Derating 10 20 TJ=25°C Reverse Voltage, VR (V) 80 30 TJ=75°C Forward Voltage, VF (V) 90 40 TJ=125°C 0.04 0 0.4 TJ=175°C 0.05 0.01 0 Forward Current, IF (A) 0.07 75 100 150 125 175 600 550 500 450 400 350 300 250 200 150 100 50 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV: Page 2 QW-BSCXX Comchip Technology CO., LTD.