CDBER40-HF

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER40-HF (RoHs Device) I o = 200 mA V R = 4 0 Volts Features H alogen free. Low reverse current. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data C ase: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BC Mounting position: Any 0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60) Weight: 0.002 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating ( at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO 40 40 28 200 0.6 150 -65 +125 +125 V V V mA A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics ( at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time I F = 1 mA I F = 4 0mA V R = 3 0V Conditions Symbol Min Typ Max Unit VF IR CT T rr 0.38 1 0.2 5 5 V uA pF nS f = 1 MHz, and 0 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 ohm REV:A QW-G1011 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER40-HF) F ig. 1 - Forward characteristics 1 000 100u Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (mA ) 10u 1 00 125 C O 1u 75 C O 10 100n 1 C 75 O C C 125 O -25 25 O C 10n 25 C O O -25 C O 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1n 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics C apacitance between terminals ( P F) 4 120 Fig.4 - Current derating curve Average forward current(%) f=1MHz O T A =25 C 3 Mounting on glass epoxy PCBs 100 80 2 60 40 1 20 0 0 10 20 30 40 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1011 Page 2 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 0.90 ± 0 .10 0.035 ± 0.004 B 1.46 ± 0 .10 0.057 ± 0.004 C 0.80 ± 0 .10 0.031 ± 0.004 d 1.55 ± 0 .05 0.061 ± 0.002 D 178 ± 1 7.008 ± 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 ± 0 .20 0.512 ± 0.008 ER/0503 (mm) (inch) SYMBOL E 1.75 ± 0 .10 0.069 ± 0.004 F 3.50 ± 0 .05 0.138 ± 0.002 P 4.00 ± 0 .10 0.157 ± 0.004 P0 4.00 ± 0 .10 0.157 ± 0.004 P1 2.00 ± 0 .10 0.079 ± 0.004 T 0.22 ± 0 .05 0.008 ± 0.002 W 8.00 ± 0 .20 0.315 ± 0.008 W1 13.5 MAX. 0.531 MAX. ER/0503 (mm) (inch) REV:A QW-G1011 Page 3 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number CDBER40-HF Marking Code BC BC Suggested PAD Layout ER/0503 SIZE (mm) A B C D E 0.85 0.55 0.85 1.40 0.30 (inch) 0.033 0.022 0.033 C D A E 0.055 B 0.118 Standard Package Qty per Reel Case Type (Pcs) ER/0503 4000 Reel Size (inch) 7 REV:A QW-G1011 Page 4 Comchip Technology CO., LTD.