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CDBER42-HF

CDBER42-HF

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    SOD-723F

  • 描述:

    DIODE SCHOTTKY 30V 200MA 0503

  • 详情介绍
  • 数据手册
  • 价格&库存
CDBER42-HF 数据手册
SMD Schottky Barrier Diode SMD Diodes Specialist CDBER42/43-HF (RoHS Device) Io = 200 mA V R = 3 0 Volts Features H alogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data C ase: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: CDBER42-HF : BD CDBER43-HF : BE Mounting position: Any Weight: 0.002 gram(approx.). O 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60) 0.022(0.55) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A =25 C unless otherwise noted) Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Thermal resistance junction to ambient air Storage temperature Junction temperature O Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO I FRM 30 30 21 200 0.5 4 150 667 -55 +125 +125 V V V mA A A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD R JA C/W O T STG Tj C C O Electrical Characteristics ( at T A =25 C unless otherwise noted) Parameter Forward voltage CDBER42/43-HF CDBER42-HF CDBER42-HF CDBER43-HF CDBER43-HF Reverse current Capacitance between terminals Reverse recovery time I F = 2 00mA I F = 1 0mA I F = 5 0mA I F = 2 mA I F = 1 5mA V R = 2 5V f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 ohm Conditions S ymbol Min Typ Max Unit VF 1 0.4 0.65 0.33 0.45 0.5 10 5 V IR CT T rr uA pF nS REV:A QW-G1026 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER42/43-HF) F ig. 1 - Forward characteristics 5 00 1m Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (mA ) 1 00 100u 125 C O 1 0u 75 C O 10 1u 1 C 75 C C O O O C O 100n 25 C O 125 0.1 0 0.2 0.4 0.6 0.8 -25 25 10n 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics C apacitance between terminals ( P F) 16 120 Fig.4 - Current derating curve Average forward current(%) 14 12 10 8 6 4 2 0 0 5 10 15 20 f=1MHz O T A =25 C Mounting on glass epoxy PCBs 100 80 60 40 20 0 25 30 35 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1026 Page 2 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 0.90 ± 0 .10 0.035 ± 0.004 B 1.46 ± 0 .10 0.057 ± 0.004 C 0.80 ± 0 .10 0.031 ± 0.004 d 1.55 ± 0 .05 0.061 ± 0.002 D 178 ± 1 7.008 ± 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 ± 0 .20 0.512 ± 0.008 ER/0503 (mm) (inch) SYMBOL E 1.75 ± 0 .10 0.069 ± 0.004 F 3.50 ± 0 .05 0.138 ± 0.002 P 4.00 ± 0 .10 0.157 ± 0.004 P0 4.00 ± 0 .10 0.157 ± 0.004 P1 2.00 ± 0 .10 0.079 ± 0.004 T 0.22 ± 0 .05 0.008 ± 0.002 W 8.00 ± 0 .20 0.315 ± 0.008 W1 13.5 MAX. 0.531 MAX. ER/0503 (mm) (inch) REV:A QW-G1026 Page 3 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number CDBER42-HF CDBER43-HF Marking Code BD BE XX xx = Product type marking code Suggested PAD Layout ER/0503 SIZE (mm) A B C D E 0.85 0.55 0.85 1.40 0.30 (inch) 0.033 0.022 0.033 C D A E 0.055 B 0.118 Standard Package Qty per Reel Case Type (Pcs) ER/0503 4000 Reel Size (inch) 7 REV:A QW-G1026 Page 4 Comchip Technology CO., LTD.
CDBER42-HF
1. 物料型号: - 型号为CDBER42/43-HF,其中CDBER42-HF标记为BD,CDBER43-HF标记为BE。

2. 器件简介: - 该器件为SMD肖特基势垒二极管,由COACHIP公司生产,专为小型表面安装设计,具有极薄/无引线封装,主要载流子导电。

3. 引脚分配: - 引脚为标准0503(1308)封装,塑封成型,端子为镀金,可焊性符合MIL-STD-750标准方法2026。

4. 参数特性: - 最大额定值(在TA=25°C时): - 峰值反向电压(VRM):30V - 反向电压(VR):30V - 有效值反向电压(VR(RMS)):21V - 平均正向整流电流(Io):200mA - 重复峰值正向电流(IFRM):0.5A - 正向电流,浪涌峰值(IFSM):4A - 功耗(PD):150mW - 热阻(ROJA):667°C/W - 存储温度(TSTG):-55°C至+125°C - 结温(Tj):+125°C

5. 功能详解: - 电气特性(在TA=25°C时,除非另有说明): - 正向电压(VF)在不同电流下的典型值分别为:200mA时为1V,10mA时为0.4V,50mA时为0.65V,2mA时为0.33V,15mA时为0.45V。 - 反向电流(IR)在VR=25V时的最大值为0.5μA。 - 引脚间电容(CT)在1MHz和1VDC反向电压下的最大值为10pF。 - 反向恢复时间(Trr)在IF=IR=10mA,Irr=0.1xIR,RL=100 ohm条件下的最大值为5ns。

6. 应用信息: - 该器件适用于需要低正向电压和肖特基势垒二极管特性的应用场合。

7. 封装信息: - 封装为0503(1308)标准封装,塑封成型,端子镀金。
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