CDBERT0230R

SMD Schottky Barrier Diode SMD Diodes Specialist CDBERT0230R (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package. Majority carrier conduction. Mechanical data 0.022(0.55) Case: 0503(1308) standard package, molded plastic. 0.018(0.45) 0.016(0.40) Typ. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BB Mounting position: Any 0.022(0.55) Typ. Weight: 0.0011 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Repetitive peak reverse voltage V RRM 35 V Reverse voltage VR 30 V Average forward current IO 200 mA I FSM 1 A Forward current,surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Storage temperature T STG Junction temperature Tj -40 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 200 mA VF 0.6 V Reverse current V R = 10 V IR 1 uA REV:A Page 1 QW-A1121 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBERT0230R) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 O Reverse current ( A ) 100 C 5 O C 10 1u O 25 C 100n C O C 75 C O 25 O 10u O -25 C 10n -25 75 1 O 12 Forward current (mA ) 125 C 100u 0.1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 0 10 Fig. 3 - Capacitance between terminals characteristics 25 30 Fig.4 - Current derating curve 100 f = 1 MHz Ta = 25 C Average forward current(%) 10 100 80 60 40 20 0 1 0 5 10 15 20 25 30 0 Fig. 6 - IR Dispersion map 560 AVG:568mV 550 540 100 125 150 O 800 700 600 500 400 300 Fig. 7 - CT Dispersion map O Ta=25 C VR=10V n=30pcs 900 Reverse current (nA) 570 75 50 1000 O Ta=25 C IF=200mA n=30pcs 580 50 Ambient temperature ( C) Fig. 5 - VF Dispersion map 590 25 O Reverse voltage (V) AVG:111nA 200 Ta=25 C F=1MHz VR=0V n=10pcs 45 Capacitance between terminals(pF) Capacitance between terminals ( P F) 20 Reverse voltage (V) Forward voltage (V) Forward voltage (mV) 15 40 35 30 25 20 15 AVG:18.8pF 10 100 5 0 0 REV:A Page 2 QW-A1121 Comchip Technology CO., LTD.