SMD Schottky Barrier Diode
SMD Diodes Specialist
C DBF0130-HF (RoHS Device)
I o = 100 mA V R = 3 0 Volts Features
Halogen free. D esigned for mounting on small surface. Extremely thin package. Low stored charge. Majority carrier conduction.
0.051(1.30) 0.043(1.10)
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical data
C ase: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026.
0.020(0.50) Typ.
0.035(0.90) 0.027(0.70)
0.012 (0.30) Typ.
Marking code: cathode band & B3 Mounting position: Any Weight: 0.006 gram(approx.).
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A =25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Sunction temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RRM VR IO 35 30 100 1000 250 -40 +125 +125 V V mA mA mW
O
8.3 ms single half sine-wave superimposed on rate load(JEDEC method)
I FSM PD T STG Tj
C C
O
Electrical Characteristics ( at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current Capacitance between terimnals V R = 3 0V
Conditions
I F = 1 00 mA DC
Symbol Min Typ Max Unit
VF IR CT 9 0.44 30 V uA pF
F = 1 MHZ and 10 VDC reverse voltage
REV:A
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Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0130-HF)
F ig. 1 - Forward characteristics
1000 1 0m 1m
F ig. 2 - Reverse characteristics
1 00
Reverse current ( A )
Forward current (mA )
125 C
O
100u
75 C
O
10
10u 1u
25 C
O
1
5O C
C
O
C
12
75
25
-25
0.1
C
O
O
100n 10n 1n
O
0.01
-25 C
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between terminals characteristics
Capacitance between terminals ( P F)
1 00
Fig.4 - Current derating curve
Mounting on glass epoxy PCBs
Average forward current(%)
3 5
f = 1 MHz Ta = 25 C
100
80
10
60
40
20
1
0
5
0
0 25 50 75 100
O
1 0
5 1
2 0
2 5
3 0
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:A
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Comchip Technology CO., LTD.
S MD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P0 P1 d Index hole E T
F B
Polarity
W C
P
A
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.55 ± 0.10
0.061 ± 0.004
B
2.65 ± 0.10
0.104 ± 0.004
C
1.05 ± 0.10
0.041 ± 0.004
d
1.55 ± 0.05
0.061 ± 0.002
D
178 ± 1
7.008 ± 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 ± 0.20
0.512 ± 0.008
F/1005
(mm) (inch)
SYMBOL
E
1.75 ± 0.10
0.069 ± 0.004
F
3.50 ± 0.05
0.138 ± 0.002
P
4.00 ± 0.10
0.157 ± 0.004
P0
4.00 ± 0.10
0.157 ± 0.004
P1
2.00 ± 0.05
0.079 ± 0.004
T
0.23 ± 0.05
0.009 ± 0.002
W
8.00 ± 0.20
0.315 ± 0.008
W1
13.5 MAX.
0.531 MAX.
F/1005
(mm) (inch)
REV:A
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Comchip Technology CO., LTD.
S MD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Park Number CDBF0130-HF Marking Code
B3
B3
Suggested PAD Layout
F/1005 SIZE (mm) A B C D E 2.10 1.20 1.20 3.30 0.90 (inch) 0.083 0.047 0.047
C D A E
0.130
B
0.035
Standard Package
Qty per Reel Case Type (Pcs) F/1005 4000 Reel Size (inch) 7
REV:A
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Comchip Technology CO., LTD.
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