CDBG850-G

SMD Schottky Barrier Diode CDBG820-G THRU CDBG860-G (RoHS Device) Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A Features: Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds enviromental standards of MIL-S-19500/228 Low leakage current 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.165(4.2) G package 0.283(7.2) 0.260(6.6) 0.012(0.3) Typ. Mechanical Data: Case: Molded plastic, G package (6.9mmx4.5mm) Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band Mounting position: Any Approx. Weight: 0.00585 ounce, 0.195 gram 0.244(6.2) 0.228(5.8) 0.032(0.8) Typ. 0.040(1.0) Typ. 0.098(2.5) 0.075(1.9) 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Maximum Ratings (at TA = 25 C unless otherwise noted) Parameter Marking Code Repetitive Peak Reverse Voltage RMS voltage Continuous reverse voltage Maximum forward voltage Max. Forward rectified current (See Fig.1) Max. Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Reverse current o VR = VRRM TA = 25 C o VR = VRRM TA = 100 C o Symbol CDBG820-G SS82 CDBG830-G SS83 30 21 30 0.55 CDBG840-G SS84 40 28 40 CDBG850-G SS85 50 35 50 CDBG860-G SS86 60 42 60 Unit VRRM VRMS VR VF IO IFSM 20 14 20 V V V V A A 0.70 8.0 150 1.0 IR 50 mA Thermal resistance Junction Ambient Diode junction capacitance f=1MHz and applied 4vDC reverse Voltage Max. Storage temperature Operating temperature RJA Cj TSTG 55 700 +150 -55 to +125 o C/ W pF oC o C www.comchiptech.com P age1 SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBG820-G THRU CDBG860-G) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 12 50 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 INSTANTANEOUS FORWARD CURRENT,(A) 10 1.0 CASE TEMPERATURE,( C) Tj=25 C Pulse Width 300us 1% Duty Cycle FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 250 0.1 200 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLT AGE,(V) 150 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 100 50 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz 2800 JUNCTION CAPACITANCE,(pF) 2400 2000 1600 1200 800 400 0 REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE 10 1.0 Tj=75 C Tj=25 C .1 .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)