CDBHM180L-G

CDBHM180L-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    TO-269AA(MBS)

  • 描述:

    桥式整流器/整流桥 80V 1A TO-269AA(MBS)

  • 数据手册
  • 价格&库存
CDBHM180L-G 数据手册
Low VF SMD Schottky Bridge Rectifiers CDBHM120L-G Thru. CDBHM1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features MBS -High surge forward current capability. 0.140(0.35) 0.006(0.15) -Low Forward voltage drop. - + -General purpose 1 phase Bridge -rectifier applications -UL recognized file # E230084 0.157(4.00) 0.276(7.00) MAX 0.142(3.60) 0.043(1.10) 0.028(0.70) 0.008(0.20) MAX 0.083(2.12) 0.043(1.10) 0.102(2.60) 0.087(2.20) R 0.053(1.53) 0.037(0.95) 0.193(4.90) 0.177(4.50) Mechanical data 0.053(1.53) 0.037(0.95) -Case: molded plastic -Epoxy: UL 94V-0 rate flame retardant. 0.106(2.70) 0.090(2.30) -Lead: solder plated 0.118(3.0) MAX 0.033(0.84) 0.022(0.56) -Polarity: As marked Dimensions in inches and (millimeters) -Weight: 0.125 gram(approx) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load. For capacitive load, derate current by 20% Parameter Symbol CDBHM-G Units Conditions 120L 140L 160L 180L 1100L Max. Repetitive peak reverse voltage VRRM 20 40 60 80 100 V Max. DC blocking voltage VDC 20 40 60 80 100 V Max. RMS voltage VRMS 14 28 42 56 70 V Average rectified output current @60Hz sine wave, R-load, TA=25°C IO On alumina substrate 1.0 On glass-epoxi substrate 0.8 A Peak forward surge current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM Max. Peak forward voltage VFM IFM=0.5A Max. Peak reverse current IRRM VRM=VRRM 0.5 mA 1ms≤t
CDBHM180L-G 价格&库存

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