CDBJFSC3650-G

Silicon Carbide Power Schottky Diode CDBJFSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device TO-220F Features - Rated to 650V at 3 Amps 0.404(10.25) 0.388( 9.85) - Short recovery time. - High speed switching possible. 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.264(6.70) 0.248(6.30) - High frequency operation. 0.602(15.30) 0.587(14.90) - High temperature operation. - Temperature independent switching behaviour. 0.185(4.70) 0.173(4.40) 0.039(1.00) 0.024(0.60) - Positive temperature coefficient on VF. 0.154(3.90) 0.130(3.30) 0.055(1.40) 0.043(1.10) Circuit diagram 0.539(13.70) 0.516(13.10) 0.031(0.80) 0.020(0.50) 0.031(0.80) 0.020(0.50) K(3) 0.110(2.80) 0.098(2.50) 0.100(2.55) 0.201(5.10) Dimensions in inches and (millimeter) K(1) A(2) Maximum Rating (at T =25°C unless otherwise noted) A Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC blocking voltage VDC 650 V IF 3 A Parameter Conditions Typical continuous forward current TC = 150°C Repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 15 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave IFSM 30 A Power dissipation Tc = 25°C 53.2 PTOT Typical thermal resistance Operating junction temperature range Storage temperature range Junction to case W 23 Tc = 110°C RθJC 7.83 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BSC10 Page 1 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions IF = 3 A , TJ = 25°C Forward voltage Typ Max 1.4 1.7 Unit VF V IF = 3 A , TJ = 175°C 1.8 VR = 650V , TJ = 25°C 10 Reverse current 100 µA IR VR = 650V , TJ = 175°C 20 VR = 400V , TJ = 150°C Total capacitive charge VR QC = ∫ 0 QC C(V) dv - 11 VR = 0V , TJ = 25°C , f = 1 MHZ nC 190 Total capacitance pF C VR = 200V , TJ = 25°C , f = 1 MHZ 23 Typical Characteristics (CDBJFSC3650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 6 0.040 0.035 Reverse Current, IR (mA) Forward Current, IF (A) 5 TJ=25°C 4 TJ=75°C 3 T=125°C J 2 T=175°C J 1 0.025 TJ=75°C 0.020 T=125°C J 0.015 T=175°C J TJ=25°C 0.010 0.005 0 0 0 0.5 1.0 1.5 2.0 2.5 300 400 500 600 700 800 Fig.4 - Capacitance vs. Reverse Voltage Capacitance Between Terminals, CJ (pF) 10% Duty 25 30% Duty 50% Duty 15 10 70% Duty D.C. 5 50 200 Fig.3 - Current Derating 30 0 25 100 Reverse Voltage, VR (V) 35 20 0 Forward Voltage, VF (V) 40 Forward Current, IF (A) 0.030 75 100 150 125 175 200 180 160 140 120 100 80 60 40 20 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BSC10 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Marking Code Part Number Marking Code CDBJFSC3650-G JFSC3650 C JFSC3650 Standard Packaging TUBE PACK Case Type TO-220F TUBE BOX ( pcs ) ( pcs ) 50 1,000 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-BSC10 Comchip Technology CO., LTD.