CDBJFSC5650-G

Silicon Carbide Power Schottky Diode CDBJFSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device TO-220F Features - Rated to 650V at 5 Amps 0.404(10.25) 0.388( 9.85) - Short recovery time. - High speed switching possible. 0.126(3.20) 0.118(3.00) 0.264(6.70) 0.248(6.30) - High frequency operation. 0.602(15.30) 0.587(14.90) - High temperature operation. - Temperature independent switching behaviour. 0.185(4.70) 0.173(4.40) 0.039(1.00) 0.024(0.60) - Positive temperature coefficient on VF. 0.154(3.90) 0.130(3.30) 0.055(1.40) 0.043(1.10) Circuit diagram 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) K(3) 0.110(2.80) 0.098(2.50) 0.539(13.70) 0.516(13.10) 0.031(0.80) 0.020(0.50) 0.031(0.80) 0.020(0.50) 0.100(2.55) 0.201(5.10) K(1) A(2) Dimensions in inches and (millimeter) Maximum Rating (at T =25°C unless otherwise noted) A Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC blocking voltage VDC 650 V IF 5 A Parameter Conditions Typical continuous forward current Tc = 150°C Repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 30 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave IFSM 60 A Power dissipation Tc = 25°C 30.9 PTOT Typical thermal resistance Operating junction temperature range Storage temperature range Junction to case W 13.4 Tc = 110°C RθJC 4.85 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BSC11 Page 1 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions IF = 5 A , TJ = 25°C Forward voltage Typ Max 1.35 1.7 Unit VF V IF = 5 A , TJ = 175°C 1.55 VR = 650V , TJ = 25°C 10 Reverse current 100 µA IR VR = 650V , TJ = 175°C 15 VR = 400V , TJ = 150°C Total capacitive charge VR QC = ∫ QC C(V) dv 0 VR = 0V , TJ = 25°C , f = 1 MHZ Total capacitance nC 23 430 VR = 200V , TJ = 25°C , f = 1 MHZ pF 44 C VR = 400V , TJ = 25°C , f = 1 MHZ 42.5 Typical Characteristics (CDBJFSC5650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 0.16 5 0.14 Reverse Current, IR (mA) Forward Current, IF (A) TJ=25°C 4 TJ=75°C TJ=125°C 3 TJ=175°C 2 1 0.12 0.10 TJ=75°C 0.08 T=125°C J 0.06 T=175°C J 0.04 TJ=25°C 0.02 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 400 500 600 700 800 Fig.4 - Capacitance vs. Reverse Voltage Capacitance Between Terminals, CJ (pF) Forward Current, IF (A) 300 Fig.3 - Current Derating 10% Duty 30 30% Duty 50% Duty 10 70% Duty 50 200 Reverse Voltage, VR (V) 40 0 25 100 Forward Voltage, VF (V) 50 20 0 D.C. 75 100 150 125 175 500 450 400 350 300 250 200 150 100 50 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BSC11 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Marking Code Part Number Marking Code CDBJFSC5650-G JFSC5650 C JFSC5650 Standard Packaging TUBE PACK Case Type TO-220F TUBE BOX ( pcs ) ( pcs ) 50 1,000 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-BSC11 Comchip Technology CO., LTD.