CDBJFSC8650-G

Silicon Carbide Power Schottky Diode CDBJFSC8650-G Reverse Voltage: 650 V Forward Current: 8 A RoHS Device TO-220F Features - Rated to 650V at 8 Amps 0.404(10.25) 0.388( 9.85) - Short recovery time. - High speed switching possible. 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.264(6.70) 0.248(6.30) - High frequency operation. 0.602(15.30) 0.587(14.90) - High temperature operation. - Temperature independent switching behaviour. 0.185(4.70) 0.173(4.40) 0.039(1.00) 0.024(0.60) - Positive temperature coefficient on VF. 0.154(3.90) 0.130(3.30) 0.055(1.40) 0.043(1.10) Circuit diagram 0.539(13.70) 0.516(13.10) 0.031(0.80) 0.020(0.50) 0.031(0.80) 0.020(0.50) K(3) 0.110(2.80) 0.098(2.50) 0.100(2.55) 0.201(5.10) Dimensions in inches and (millimeter) K(1) A(2) Maximum Rating (at T =25°C unless otherwise noted) A Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC blocking voltage VDC 650 V IF 8 A Parameter Conditions Typical continuous forward current TC = 135°C Repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 40 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave IFSM 80 A Power dissipation TC = 25°C 36.9 PTOT Typical thermal resistance Operating junction temperature range Storage temperature range Junction to case W 16 TC = 110°C RθJC 4.07 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BSC12 Page 1 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions IF = 8 A , TJ = 25°C Forward voltage Typ Max 1.45 1.7 Unit VF V IF = 8 A , TJ = 175°C 1.75 VR = 650V , TJ = 25°C 10 Reverse current 100 µA IR VR = 650V , TJ = 175°C 15 VR = 400V , TJ = 150°C Total capacitive charge VR QC = ∫ 0 QC C(V) dv VR = 0V , TJ = 25°C , f = 1 MHZ Total capacitance nC 30 560 VR = 200V , TJ = 25°C , f = 1 MHZ pF 56.5 C VR = 400V , TJ = 25°C , f = 1 MHZ 54 Typical Characteristics (CDBJFSC8650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 8 0.09 0.08 TJ=25°C Reverse Current, IR (mA) Forward Current, IF (A) 7 TJ=75°C 6 TJ=125°C 5 4 TJ=25°C 3 2 1 0.06 TJ=175°C 0.05 TJ=125°C 0.04 0.03 0.02 TJ=75°C 0.01 0 TJ=25°C 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Capacitance Between Terminals, CJ (pF) 40 0 25 30% Duty 50% Duty 70% Duty 50 300 400 500 600 700 800 Fig.4 - Capacitance vs. Reverse Voltage 10% Duty 10 200 Fig.3 - Current Derating 50 20 100 Reverse Voltage, VR (V) 60 30 0 Forward Voltage, VF (V) 70 Forward Current, IF (A) 0.07 D.C. 75 100 150 125 175 600 550 500 450 400 350 300 250 200 150 100 50 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BSC12 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Marking Code Part Number Marking Code CDBJFC8650-G JFSC8650 C JFSC8650 Standard Packaging TUBE PACK Case Type TO-220F TUBE BOX ( pcs ) ( pcs ) 50 1,000 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-BSC12 Comchip Technology CO., LTD.