0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CDBM120

CDBM120

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CDBM120 - SMD Schottky Barrier Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CDBM120 数据手册
S MD Schottky Barrier Rectifier SMD COMCHIP www.comchip.com.tw C DBM120 Thru CDBM1100 R everse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S19500/228 Low leakage current MINI SMA 0.161(4.10) 0.146(3.70) 0.012(0.30) Typ. 0.071(1.80) 0.055(1.40) Mechanical data C ase: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.04 gram 0.110(2.80) 0.094(2.40) 0.063(1.60) 0.055(1.40) 0.035(0.90) Typ. 0.035(0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) R R Operating Junction Temperature Storage Temperature Tj T STG JA JL Symbol V RRM V DC V RMS I FSM CDBM120 CDBM140 CDBM160 CDBM180 CDBM1100 Unit V V V A 20 20 14 40 40 28 60 60 42 80 80 56 100 100 70 30 Io VF IR 10 0.50 1.0 0.70 0.85 A V mA 5 0 .5 88 20 -55 to +125 -55 to +150 -55 to +150 C /W C C N ote 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas M DS0208014B Page 1 SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CDBM120 Thru CDBM1100) Fig. 1 - Reverse Characteristics 100 100 CDBM120-140 CDBM160 F ig.2 - Forward Characteristics R everse Current ( mA ) Forward Current ( A ) 10 10 CDBM180-1100 1 Tj=75 C 1 0.1 0.1 Tj=25 C 0.01 0.01 0 20 40 60 80 100 120 140 160 180 200 0 .1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Forward Voltage (V) 1.9 2.1 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 3 50 Fig. 4 - Current Derating Curve J unction Capacitance (pF) 300 250 200 150 100 50 0 0.01 0.1 = 1MHz and applied 4VDC reverse voltage 1.2 Average forward current ( A ) 1.0 CD 0.8 0.6 0.4 0.2 0 BM CD BM 12 014 0 16 00 11 0 1.0 10 100 20 40 60 80 100 120 140 160 Reverse Voltage (V) Ambient Temperature ( C) Fig. 5 - Non repetitive Forward Surge Current Peak surge Forward Current ( A ) 30 8.3mS Single Half Sine Wave JEDEC methode 24 18 Tj=25 C 12 6 0 1 5 10 50 1 00 N umber of Cycles at 60Hz M DS0208014B Page 2
CDBM120 价格&库存

很抱歉,暂时无法提供与“CDBM120”相匹配的价格&库存,您可以联系我们找货

免费人工找货