CDBN0245

SMD Schottky Barrier Diode COMCHIP w ww.comchip.com.tw C DBN0245 I o = 200 mA V R = 45 Volt s Features D esigned for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 1206(3216) 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ Mechanical data C ase: 1206(3216) Standard package, molded plastic . Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. 0.010(R0.25) Typ. 0.063 (1.60) 0.055 (1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Weight: 0.0085 gram. (approximately) Maximum Rating ( at T A = 2 5 C unless otherwise noted ) P arameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8 .3 ms single half sine-wave superimposed on rate load ( JEDEC method ) C onditions Symbol Min Typ Max U nit V RRM VR Io I FSM PD T STG Tj - 40 -40 3 000 2 50 +125 +125 50 45 200 V V mA mA mW C C Electrical Characteristics ( at T A = 2 5 C unless otherwise noted ) P arameter Forward voltage Reverse current Capacitance between terminals V R = 45 V f = 1MHz, and 10 VDC reverse voltage C onditions I F = 2 00 mA DC Symbol M in Typ M ax Unit VF IR CT 10 0 .55 30 V uA pF RDS0208016-C Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBN0245) Fig. 1 - Forward characteristics 1000 1m F ig. 2 - Reverse characteristics Forward current (mA ) Reverse current ( A ) 125 C 100u 1 00 75 C 10u 10 C 1u 25 C 125 C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 -25 C 25 C 75 100n 0 10 20 30 40 50 Forward voltage (V) R everse voltage (V) Fig. 3 - Capacitance between terminals characteristics C apacitance between terminals (pF) 1 00 Fig. 4 - Current derating curve f = 1 MHz Ta = 25 C Average forward current ( % ) Mounting on glass epoxy PCBs 100 80 10 60 40 20 1 0 5 10 15 0 20 25 30 35 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature ( C ) RDS0208016-C Page 2