CDBP0130R-G

SMD Schottky Barrier Diode CDBP0130R-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 mA E2 E SOD-723 b Features: - + D Small Surface Mounting Type Low Reverse Current and Low Forward Voltage. E1 θ L High Reliability c Mechanical Data: Case: Molded plastic SOD-723 θ Terminals: Solderable per MIL-STD-750, Method Symbol 2026.1. A A1 b c D E E1 E2 L θ Polarity: Indicated by cathode band. Mounting position: Any. Marking: E A1 A Inches Millimeters Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7º REF Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7º REF Maximum Ratings (at TA=25ºC unless otherwise specified) Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current Io 100 mA IFSM 500 mA Junction temperature TJ 125 ºC Storage temperature Tstg -40~+125 ºC Peak forward surge current Electrical Ratings (at TA=25ºC unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.45 V IF=10mA Reverse current IR 0.5 μA VR=10V “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode CDBP0130R-G (RoHS Device) Electrical Characteristic Curves (CDBP0130R-G) Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics 1 1m 150ºC 100μ 100m Reverse Current (A) Forward Current (A) 125ºC 150ºC 10m -25ºC 25ºC 1m 75ºC 100μ 125ºC 10μ 10μ 75ºC 1μ 25ºC 100n -25ºC 10n 1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 Forward Voltage (V) 10 20 30 40 Reverse Voltage (V) Capacitance between Terminals (pF) Fig. 3 Capacitance between Terminals 100 SOD-723 PAD-SIZE 0.6 mm. 10 0.7mm. 1 0 5 10 15 20 25 30 Reverse Voltage (V) 1.2mm. “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2