CDBQR54

SMD Schottky Barrier Diode CDBQR54 I o = 200 mA V R = 30 Volts RoHS Device 0402/SOD-923F Features 0.041(1.05) 0.037(0.95) -Low forward voltage. -Designed for mounting on small surface. 0.026(0.65) 0.022(0.55) -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data 0.022(0.55) -Case: 0402/SOD-923F standard package, molded plastic. 0.018(0.45) 0.012(0.30) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking Code: Cathode band & BF -Mounting position: Any. 0.020(0.50) Typ. -Weight: 0.001 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Power dissipation V RM 30 V VR 30 V V R(RMS) 21 V IO 200 mA I FRM 0.3 A I FSM 0.6 A PD 125 mW Storage temperature T STG Junction temperature Tj -65 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA Reverse current Symbol Min Typ Max Unit VF 0.24 0.32 0.4 0.5 1 V V R = 25V IR 2 uA Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage CT 10 pF Reverse recovery time I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm T rr 5 nS REV:B Page 1 QW-A1122 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR54) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 Reverse current ( A ) 100 10 O 75 C 1u O 25 C C 100n O C 10u -25 O 25 C O 125 75 C 1 O Forward current (mA ) O 125 C 100u O -25 C 0.1 10n 0 0.2 0.4 0.6 0.8 0 5 15 20 30 25 Reverse voltage (V) Forward voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 120 14 Mounting on glass epoxy PCBs f=1MHz O T A =25 C 12 Average forward current(%) Capacitance between terminals ( P F) 10 10 8 6 4 2 100 80 60 40 20 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:B Page 2 QW-A1122 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... 10 pitches (min) ....... ....... Start 10 pitches (min) Direction of Feed 0402 (SOD-923F) 0402 (SOD-923F) SYMBOL A B C d D D1 D2 (mm) 0.75 ± 0.10 1.15 ± 0.10 0.60 ± 0.10 1.55 + 0.10 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.026 ± 0.004 0.045 ± 0.004 0.024 ± 0.004 0.061 + 0.004 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.22 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:B Page 3 QW-A1122 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Part Number Marking Code CDBQR54 BF BF Suggested PAD Layout 0402/SOD-923F SIZE (mm) (inch) A 0.750 0.030 B 0.500 0.020 C 0.700 0.028 D 1.250 0.049 E 0.250 0.010 D A E C B Standard Package Qty per Reel Reel Size (Pcs) (inch) 5000 7 Case Type 0402/SOD-923F REV:B Page 4 QW-A1122 Comchip Technology CO., LTD.