CDBS0130

SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist C DBS0130 I o = 100mA V R = 30 Volt s Features D esigned for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0.087(2.20) 0.079(2.00) 0.016(0.40) Typ. 0805 (2012) Mechanical data C ase: 0805(2012) Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Indicated by cathode band Mounting position: Any 0 .008(R0.20)Typ. 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) Dimensions in inches and (millimeter) Weight: 0.0048 gram (approximately) Maximum Rating ( at T A = 2 5 C unless otherwise noted ) P arameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8 .3 ms single half sine-wave superimposed on rate load ( JEDEC method ) C onditions Symbol Min Typ Max U nit V RRM VR Io I FSM PD T STG Tj - 40 -40 1 000 2 50 +125 +125 35 30 100 V V mA mA mW C C Electrical Characteristics ( at T A = 2 5 C unless otherwise noted ) P arameter Forward voltage Reverse current Capacitance between terminals V R = 30 V f = 1MHz, and 10 VDC reverse voltage C onditions I F = 1 00 mA DC Symbol M in Typ M ax Unit VF IR CT 10 0 .44 30 V uA pF REV:A Q W-A1010 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBS0130) Fig. 1 - Forward characteristics 1000 1m F ig. 2 - Reverse characteristics Forward current (mA ) Reverse current ( A ) 125 C 100u 1 00 75 C 10u 10 5C 12 C 1u 25 C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 25 C -25 C 75 100n 0 10 20 30 40 50 Forward voltage (V) R everse voltage (V) Fig. 3 - Capacitance between terminals characteristics C apacitance between terminals (pF) 20 Fig. 4 - Current derating curve f = 1 MHz Ta = 25 C Average forward current ( % ) Mounting on glass epoxy PCBs 100 80 10 60 40 20 1 0 5 10 15 0 20 25 30 35 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature ( C ) REV:A Q W-A1010 Page 2