CDBU0140R

SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist C DBU0140R (Lead-free Device) I o = 100 mA V R = 40 Volt s Features L ow forward Voltage Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data C ase: SOD-523F (1608) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) Mounting position: Any. 0.018(0.45) Typ. Weight: 0.003 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 2 5 C unless otherwise noted ) P arameter Repetitive peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8 .3 ms single half sine-wave superimposed on rate load ( JEDEC method ) C onditions Symbol Min Typ M ax U nit V RRM VR Io I FSM T STG Tj - 40 -40 45 40 100 1 +125 +125 V V mA A C C Electrical Characteristics ( at T A = 2 5 C unless otherwise noted ) P arameter Forward voltage Reverse current Capacitance between terminals I F = 10 mA V R = 10 V f = 1MHz, and 10 VDC reverse voltage C onditions Symbol M in Typ M ax U nit VF IR CT 6 0 .45 1 V uA pF REV:A Q W-A1015 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBU0140R) Fig. 1 - Forward characteristics 1000 F ig. 2 - Reverse characteristics 1m 100u Forward current (mA ) 100 Reverse current ( A ) 125 O C 10u 75 O C 10 1u 100n 25O C 25 C O 1 125 C 75 C 25 C O O O 10n 25 C O 0.1 0 0.2 0.4 0.6 0.8 1.0 1n 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics 100 F ig. 4 - Current derating curve C apacitance between terminals (pF) Average forward current ( % ) 100 80 60 40 20 0 10 1 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 Reverse voltage (V) Ambient temperature ( C ) REV:A Q W-A1015 Page 2