CDSH3-222P-G

Small Signal Switching Diodes CDSH3-222N-G/222P-G Reverse Voltage: 80 Volts Power Dissipation: 150 mW RoHS Device Features SOT-523 -Design for mounting on small surface. 0.067(1.70) 0.059(1.50) -High speed switching. 3 -High mounting capability, strong surge withstand, high reliability. 0.033(0.85) 0.030(0.75) 1 Mechanical data 2 0.043(1.10) 0.035(0.90) 0.008(0.20) 0.004(0.10) -Case: SOT-523, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. 0.069(1.75) 0.057(1.45) 0.031(0.80) 0.024(0.60) -Approx. weight: 0.002 grams 0.004(0.10)max. 0.012(0.30) 0.006(0.15) Circuit diagram 3 0.004(0.10)min. 3 Dimensions in inches and (millimeter) 1 2 CDSH3-222N-G 1 2 CDSH3-222P-G Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Repetitive peak reverse voltage Symbol Conditions Value Units VRRM 80 V Reverse voltage VR 80 V Peak forward current IF 300 mA 4 A 150 mW Peak surge forward current IFSM Power dissipation PD Maximum forward voltage VF @IF=100mA 1.2 V Maximum reverse current IR @VR=70V 0.1 μA Maximum reverse recovery time Trr IF=IR=5mA, RL=100Ω 4 nS Maximum diode capacitance CJ VR=6V, f=1.0MHz 3.5 pF Maximum junction temperature TJ 150 O C TSTG -55 to +150 O C Storage temperature T=1.0 sec REV:A Page 1 QW-B0011 Comchip Technology CO., LTD. Small Signal Switching Diodes RATING AND CHARACTERISTIC CURVES (CDSH3-222N-G/222P-G) Fig.1 - Forward Characteristics (P type) Fig.2 - Reverse Characteristics (P type) 100 1μ O TA=100 C 100n Reverse Current, (A) F o r w a r d C u r rent, ( mA) O TA=85 C 10 O TA=30 C O TA=-30 C O TA=0 C O TA=25 C 1 O TA=75 C O TA=50 C 10n O TA=25 C O TA=0 C 1n O TA=-25 C 0.1n 0.1 0.01n 0 0.4 0.8 1.2 1.6 10 0 20 40 30 Forward Voltage, (V) Reverse Voltage, (V) Fig.3 - Forward Characteristics (N type) Fig.4 - Reverse Characteristics (N type) 100 50 1m O TA=100 C 100μ Reverse Current, (A) For w ard Current, (mA) O TA=75 C TA=85 OC 10 TA=-30 OC TA=30 OC TA=0 OC TA=25 OC 1 O 10μ TA=50 C O TA=25 C 1μ TA=0 OC 100n TA=-25 OC 10n 0.1 1n 0 0.4 0.8 1.2 1.6 60 40 80 Forward Voltage, (V) Reverse Voltage, (V) Fig.5 - Capacitance Between Terminals Characteristics Fig.6 - Power Derating Curve 4 200 O TJ=25 C f=1MHz P o we r Dis s ip at i on P D/P D M a x ., (%) Ca p a c it a n c e B e t w e e n Te rminal s, ( p F ) 20 0 3 2 P Type N Type 1 Mounted on glass epoxy PCBs 150 100 50 0 0 0 4 8 12 16 20 0 25 50 75 100 125 150 175 Ambient Temperature, (°C) Reverse Voltage, (V) REV:A Page 2 QW-B0011 Comchip Technology CO., LTD.