CDSH3-4448C-G

SMD Switching Diodes CDSH3-4448/A/C/S-G Voltage: 80 Volts Current: 250 mA RoHS Device Features SOT-523 -Fast switching speed. 0.067(1.70) 0.059(1.50) -For general purpose switching applications. 3 -High conductance. 0.033(0.85) 0.030(0.75) Mechanical data 1 -Case: SOT-523, molded plastic. -Terminals: Solder plated, solderable per MIL-STD202E, method 208C. -Weight: 0.002 grams approx. 2 0.008(0.20) 0.004(0.10) 0.043(1.10) 0.035(0.90) 0.069(1.75) 0.057(1.45) 0.031(0.80) 0.024(0.60) Circuit Diagram 3 3 3 0.004(0.10)max. 3 0.012(0.30) 0.006(0.15) 1 2 1 CDSH3-4448-G Marking: A3 2 1 CDSH3-4448A-G Marking: A6 2 1 CDSH3-4448C-G Marking: A7 0.004(0.10)min. 2 CDSH3-4448S-G Marking: AB Dimensions in inches and (millimeter) Maximum Ratings (Single diode, at TA=25°C unless otherwise noted) Symbol Value Unit Non-repetitive peak reverse voltage VRM 100 V Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 80 V Parameter DC blocking voltage VR RMS reverse voltage VR(RMS) 57 V Forward continuous current IFM 500 mA Averaged rectified output current IO 250 mA IFSM 4.0 2.0 A PD 150 Peak forward surge current @TP=1.0μS @TP=1.0S Power dissipation Thermal resistance, junction to ambient RθJA 833 Storage temperature TSTG -65 to +150 mW O C/W O C Electrical Characteristics (Single diode, at TA=25°C unless otherwise noted) Parameter Reverse breakdown voltage Forward voltage Symbol Conditions Min. VBR IR=2.5μA 80 VF1 IF=5mA 0.62 Typ. Max. Unit V 0.72 V VF2 IF=10mA 0.855 V VF3 IF=100mA 1.0 V VF4 IF=150mA 1.25 V IR1 VR=70V 0.1 μA IR2 VR=20V 25 nA Reverse current Capacitance between terminals CT VR=6V, f=1MHz 3.5 pF Reverse recovery time Trr VR=6V, IF=5mA 4 nS REV:A Page 1 QW-B0038 Comchip Technology CO., LTD. SMD Switching Diodes Rating and Characteristic Curves (CDSH3-4448/A/C/S-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 10000 ΙR, Instantaneous Reverse Current (nA) IF, Instantaneous Forward Current (mA) 1000 100 O TA=125 C O TA=75 C 10 O TA=25 C TA=0 OC O TA=-40 C 1 0.1 0 0.4 0.8 O TA=125 C 1000 O TA=75 C 100 O TA=0 OC 1 O TA=-40 C 0.1 0 1.6 1.2 TA=25 C 10 Fig.3 - Capacitance Between Terminals Characteristics 40 60 80 100 Fig.4 - Power Derating Curve 3 250 f=1MHz 2.5 PD, Power Dissipation (mW) CT, Capacitance Between Terminals (pF) 20 VR, Instantaneous Reverse Voltage (V) VF, Instantaneous Forward Voltage (V) 2 1.5 1 0.5 0 200 150 100 50 0 0 10 20 30 40 50 0 VR, Reverse Voltage (V) 100 200 TA, Ambient Temperature (°C) REV:A Page 2 QW-B0038 Comchip Technology CO., LTD.