CDSH6-16-G

SMD Switching Diode COMCHIP CDSH6-16-G High Speed RoHS Device Features -Fast Switching Speed -For general purpose switching applications. -High conductance. 0.051(1.30) 0.043(1.10) 0.067(1.70) 0.059(1.50) SOT-563 Mechanical data Case: SOT-563, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 0.022(0.55) 0.018(0.45) 0.024(0.60) 0.021(0.52) 0.006(0.16) 0.004(0.09) 0.067(1.70) 0.059(1.50) Marking: KAM Circuit diagram C1 NC A2 0.011(0.27) 0.007(0.17) 0.002(0.05)max 0.012(0.30) 0.004(0.10) A1 NC C2 Dimensions in inches and (millimeters) Maximum Rating (at TA=25 Parameter Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward continuous current Averaged rectified output current Peak forward surge current Power dissipation Thermal resistance, junction to air Junction temperature Storage temperature @t=1.0μs @T=1.0s O C unless otherwise noted) Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TJ TSTG O Max 100 75 53 300 200 2 1 150 833 150 -65 to +150 Unit V V V mA mA A mW O C/W O C C O Electrical Characteristics (at TA=25 Parameter Reverse breakdown voltage Reverse voltage leakage current IR=100μA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz C unless otherwise noted) Symbol VBR IR Conditions Min 75 Max A 1 25 0.715 0.855 1 1.25 2 4 Unit V μA nA Forward voltage VF V Diode capacitance Reverse recovery time CT trr pF nS IF=IR=10mA, Irr=0.1×IR, RL=100Ω REV:B QW-B0042 Page 1 Comchip Technology CO., LTD. SMD Switching Diode Typical Characteristics (CDSH6-16-G) Fig.1 Forward Power Derating Curve 250 COMCHIP Fig.2 Typical Forward Characteristics 1 PD, Power Dissipation (mW) 200 IF, Instantaneous Forward Current (A) TA=150 C O 0.1 TA=75 C TA=25 OC O O 150 TA=0 C 100 0.01 TA=-40 OC 50 0 0 50 100 150 O 0.001 0 0.5 1 1.5 200 TA, Ambient Temperature ( C) VF, Instantaneous Forward Voltage (V) Fig.3 Typical Diode Capacitance Characteristics 2.0 TJ=25 C f=1MHz O Fig.4 Typical Reverse Current Characteristics 10000 TA=150 OC TA=125 OC CT, Diode Capacitance (pF) IR, Reverse Current (nA) 1.6 1000 1.2 100 TA=75 OC TA=25 OC 0.8 10 TA=0 C O 0.4 1 TA=-40 C O 0 0 10 20 30 40 0.1 0 20 40 60 80 100 VR, Reverse Voltage (V) VR, Reverse Voltage (V) REV:B QW-B0042 Page 2 Comchip Technology CO., LTD.