CDST-116-G

SMD Switching Diode CDST116-G RoHS Device Features SOT-23 0.119(3.00) -Low leakage current applications. 0.110(2.80) 3 -Medium speed switching times. 0.056(1.40) 0.047(1.20) Polarity: 1 2 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 0.006(0.15) max Marking: JV 0.020(0.50) 0.007(0.20) min 0.013(0.35) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Unit VRRM VRWM VR t 75 V V Forward continuous current IFM 215 mA Power dissipation PD 250 mW Junction temperature TJ 150 O C -55 to +150 O C Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Storage temperature TSTG Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Reverse breakdown voltage Conditions IR=100μA Symbol Min Typ. Max Unit V(BR)R 75 V V V IF=1mA VF1 0.9 V IF=10mA VF2 1 V IF=50mA VF3 1.1 V IF=150mA VF4 1.25 V 5 μA Forward voltage Reverse current VR=75V IR Capacitance between terminals VR=0V, f=1MHz CT Reverse recovery time IF=IR=10mA, Irr=0.1×IR, RL=100Ω trr 2 pF 3 nS REV:A QW-B0029 Page 1 SMD Switching Diode RATING AND CHARACTERISTIC CURVES (CDST116-G) Fig.2 - Forward Voltage Characteristics Fig.1 - Forward Current Derating Curve 100 0 xm i u mv alue s a l v a lu T j= 2 5 OC , Ma T= j 25 O C , Typ i c 5 0 OC 100 0 0 200 100 1 0.4 0.8 1.2 Ambient Temperature (°C) VF, Forward Voltage (V) Fig.3 - Reverse Characteristics Fig.4 - Diode Capacitance Characteristics 100 1.6 2 CT, Diode Capacitance (pF) IR, Reverse Current (nA) 200 T j= 1 200 es 300 IF, Forward Current (mA) IF, Forward Current (mA) 300 10 1 0.1 0.01 0.001 1 f=1MHz O TJ=25 C 0 0 50 100 150 TJ, Junction Temperature (°C) 200 0 5 10 15 20 VR, Reverse Voltage (V) REV:A QW-B0029 Page 2