CDST-7000-G

Surface Mount Switching Diode CDST7000-G Voltage: 100 Volts Current: 200 mA Features SOT-23 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 Mechanical data 1 ANODE 3 CATHODE/ANODE 2 CATHODE 2 .020 (0.5) .044 (1.10) .035 (0.90) .037(0.95) .037(0.95) .006 (0.15) .002 (0.05) 1 .006 (0.15)max. Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 208 Approx. Weight: 0.008 gram .103 (2.6) .086 (2.2) .020 (0.5) Dimensions in inches (millimeters) Maximum Ratings Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR Value 100 Units VDC IF 200 mAdc IFM (surge) 500 mAdc Symbol Max Units Thermal Characteristics Characteristic Total Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Resistance, Junction t o Ambient Total Device Dissipation Alumina S ubstrate,(2) T A = 25°C Derate above 25°C PD RθJA PD 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C RθJA 417 °C/W TJ, Tstg –55 to +150 °C Symbol V(BR) Min Max Units 100 - Vdc IR - 1 VR = 100 Vdc IR2 - 3 VR = 50 Vdc, 125°C IR3 - 100 Thermal Resistance, Junction t o Ambient Junction and Storage Temperature Electrical Characterics (TA = 25°C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I (BR) = 100 uAdc ) Reverse Voltage Leakage Current Forward Voltage V R = 50 Vdc IF = 1.0 mAdc IF = 10 mAdc VF IF = 100 mAdc Reverse Recovery Time (I F = IR = 10 mAdc) (Figure 1) Trr Diode Capacitance (V R = 0) C 1.FR–5 = 1.0 X 0.75X 0.062 in. MDS0301004A 0.55 0.7 0.67 0.82 0.75 1.1 - uAdc Vdc 4.0 nS 1.5 pF 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina. Page 1 Surface Mount Switching Diode Rating and Characteristic Curves (CDST7000-G) 820 Ω +10 V 2k 0.1 µF tp tr IF 100 µH 0.1 µF IF t trr 10% t DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% IR(REC) = 1 mA IR VR Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 10 IR, Reverse Current(µA) TA = 85°C TA = –40°C VR TA = 25°C 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 0 10 20 30 VF, Forward Voltage(V) VR, Reverse Voltage(V) Figure 2. Forward Voltage Figure 3. Leakage Current 40 50 0.68 CD, Diode Capacitance(PF) I F, Forward Current (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 VR, Reverse Voltage(V) Figure 4. Capacitance MDS0301004A Page 2