CDST7000

Surface Mount Switching Diode COMCHIP www.comchiptech.com CDST7000 V oltage: 100 Volts Current: 200 mA Features F ast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 M echanical data .037(0.95) .037(0.95) .006 (0.15)max. .006 (0.15) .002 (0.05) 1 ANODE 3 CATHODE/ANODE 2 CATHODE .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) Maximum Ratings Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 100 200 500 Units VDC mAdc mAdc Thermal Characteristics Characteristic Total Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Resistance, Junction t o Ambient Total Device Dissipation Alumina S ubstrate,(2) T A = 25°C Derate above 25°C Thermal Resistance, Junction t o Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ, Tstg Max 225 1.8 556 300 2.4 417 –55 to +150 Units mW mW/°C °C/W mW mW/°C °C/W °C Electrical Characterics (TA = 25°C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I (BR) = 100 uAdc ) Reverse Voltage Leakage Current V R = 50 Vdc VR = 100 Vdc VR = 50 Vdc, 125°C Forward Voltage IF = 1.0 mAdc IF = 10 mAdc IF = 100 mAdc Reverse Recovery Time (I F = IR = 10 mAdc) (Figure 1) Diode Capacitance (V R = 0) 1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina. Trr C VF Symbol V(BR) IR IR2 IR3 Min 100 0.55 0.67 0.75 Max 1 3 100 0.7 0.82 1.1 4.0 1.5 nS pF Vdc uAdc Units Vdc MDS0301004A .044 (1.10) .035 (0.90) C ase: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.008 gram 1 2 Page 1 Surface Mount Switching Diode Rating and Characteristic Curves (CDST7000) 820 Ω +10 V 2k 100 µH 0.1 µF DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% VR Input Signal IR IF 0.1 µF tr 10% tp t IF COMCHIP www.comchiptech.com trr t IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85°C 10 VR TA = 25°C 1.0 10 TA = 150°C TA = 125°C I F, Forward Current (mA) TA = –40°C IR, Reverse Current(µA) 1.0 0.1 TA = 85°C TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, Forward Voltage(V) 0.001 0 10 20 30 40 50 VR, Reverse Voltage(V) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, Diode Capacitance(PF) 0.64 0.60 0.56 0.52 0 2.0 4.0 VR, Reverse Voltage(V) 6.0 8.0 Figure 4. Capacitance MDS0301004A Page 2