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CDSW4448-G

CDSW4448-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    SOD123

  • 描述:

    DIODE GEN PURP 75V 500MA SOD123

  • 数据手册
  • 价格&库存
CDSW4448-G 数据手册
Small Signal Switching Diodes CDSW4448-G Reverse Voltage: 75 Volts Power Dissipation: 400 mW RoHS Device SOD-123 Features -Design for mounting on small surface. -High speed switching. 0.110(2.80) 0.098(2.50) -High mounting capability, strong surge withstand, high reliability. 0.071(1.80) 0.055(1.40) 0.028(0.70) 0.019(0.50) -Also available in other standard case: CDSN4448 - 1206 size CDSF4448 - 1005 size CDSU4448 - 0603 size 0.154(3.90) 0.141(3.60) Mechanical data 0.053(1.35) 0.037(0.95) 0.008(0.20) Max. -Case: SOD-123, molded plastic. 0.016(0.40) Min. 0.005(0.12) Max. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: indicated by cathode band. Dimensions in inches and (millimeter) -Approx. weight: 0.01 grams Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted) Value Units VRRM 75 V Reverse voltage VR 75 V Forward current IFM 500 mA Peak surge forward current IFSM 4 A Power dissipation PD 400 mW 0.72 0.855 1 1.25 V 2.5 0.025 μA Parameter Repetitive peak reverse voltage Symbol Conditions T=1.0 μS Maximum forward voltage VF @IF=5mA @IF=10mA @IF=100mA @IF=150mA Maximum reverse current IR @VR=75V @VR=25V Maximum reverse recovery time Trr IF=10mA, RL=100Ω 4 nS Typical diode capacitance CJ VR=0V, f=1.0MHz 4 pF Maximum junction temperature TJ 125 O C TSTG -55 to +125 O C Storage temperature REV:A Page 1 QW-B0013 Comchip Technology CO., LTD. Small Signal Switching Diodes RATING AND CHARACTERISTIC CURVES (CDSW4448-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 10μ 100 10 O TA=85 C TA=-30 OC TA=0 OC O TA=50 C 1 Reverse Current, (A) Forward Current, (mA) 1μ O TA=75 C 10n TA=25 OC TA=0 OC O TA=25 C 1n 0.1 O TA=-30 C 0.1n 0 0.2 0.4 0.6 0.8 1.0 20 0 40 80 60 Forward Voltage, (V) Reverse Voltage, (V) Fig.3 - Capacitance Between Terminals Characteristics Fig.4 - Power Derating Curve 4 100 600 Mounted on glass epoxy PCBs O TJ=25 C f=1MHz Power Dissipation, (mW) Capacitance Between Terminals, (pF) TA=125 OC 100n 3 2 1 500 400 300 200 100 0 0 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 Ambient Temperature, (°C) Reverse Voltage, (V) REV:A Page 2 QW-B0013 Comchip Technology CO., LTD.
CDSW4448-G 价格&库存

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