CECS0324V-G

CECS0324V-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CECS0324V-G - Bidirectional ESD / Transient Suppressor - Comchip Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
CECS0324V-G 数据手册
Bidirectional ESD / Transient Suppressor CE Series -G (RoHS Device) Features (16kV) IEC 61000-4-2 rating Surface mount package High component density SOT23-6 -VBD 0V +VBD Applications ESD suppression Transient suppression Automotive CAN Bus Schematic SOT23-5 SOT-23-3 3 2 1 4 5 6 3 2 1 4 5 6 3 2 1 4 3 2 1 1 4 5 1 2 3 CEA – ( SOT23-3) CEB – ( SOT23-6) CEC – ( SOT23-6) CED – ( SOT23-5) CEG – ( SOT-143) Application Schematic Gnd. Connector Vp (Transient) Transceiver Vclamp 0v Specifications (Ta = 25oC) Symbol Characteristic Operation Temperature Range Min. -55 Max. +125 Units oC To Bidrectional ESD / Transient Suppressor Specifications:( Ta = 25oC ) 36V Characteristic PRELIMINARY Symbol VBD IL CT VESD VPV Ipp * Symbol VBD IL CT VESD VPV Ipp * Symbol VBD IL CT VESD VPV Ipp * Characteristic Diode breakdown voltage Leakage current Capacitance Channel clamp voltage Peak ESD voltage capability Peak Pulse Current Characteristic Diode breakdown voltage Leakage current Capacitance Channel clamp voltage Peak ESD voltage capability Peak Pulse Current Characteristic Diode breakdown voltage Leakage current Capacitance Channel clamp voltage Peak ESD voltage capability Peak Pulse Current Min 38 Typ 40 0.1 5 Max 2.0 + 40 16 15 Max 2.0 + 25 16 15 Max 2.0 + 17 16 15 Max + 2.0 20 + 7.0 16 5.1 Units V uA pF V kV A Units V uA pF V kV A Units V uA pF V kV A Units V uA pF V kV A Test Condition IF = 1 ma 36v @ 1Mhz 8kV event IEC 61000-4-2 8 / 20 us Test Condition IF = 1 ma 24v @ 1Mhz 8kV event IEC 61000-4-2 8 / 20 us Test Condition IF = 1 ma 12v @ 1Mhz 8kV event IEC 61000-4-2 8 / 20 us Test Condition IF = 1 ma 5v @ 1Mhz 8kV event IEC 61000-4-2 8 / 20 us 24V Characteristic (CAN bus) Min 25 Typ 28 0.1 10 - 12V Characteristic PRELIMINARY Min 14 Typ 17 0.1 12 - 5V0 Characteristic Symbol Characteristic VBD Diode breakdown voltage IL Leakage current CT Capacitance VESD Channel clamp voltage VPV Peak ESD voltage capability Ipp * Peak Pulse Current * one diode conducting Min 5.1 Typ 7.0 +0.1 15 - Package Information: P d d p d p d p W S03 W S05 P W S06 W S14 0.7 Dimensions in ( mm ): Code S03 S05 S06 S14 Power 225 mw 225 mw 225 mw 225 mw L L L L Pins 3 5 6 4 L + 0.2 2.90 2.90 2.90 2.90 CEA CEB CEC CED CEG W + 0.2 2.30 2.80 2.80 2.80 p + 0.1 0.95 0.95 - P + 0.1 1.90 1.90 1.90 Pkg. Height 1.0 1.0 1.0 1.0 d + 0.1 0.43 0.43 0.43 0.43 Ordering Information: CEA Type S03 Package Code From table above 5V0 Voltage 5V0 / 12V 12V / 24V -G RoHS Compliant
CECS0324V-G
PDF文档中包含以下信息: 1. 物料型号:型号为“LM324”。

2. 器件简介:LM324是一款四运算放大器集成电路,广泛应用于模拟信号处理。

3. 引脚分配:引脚1为非反相输入,引脚2为反相输入,引脚3为输出,引脚4为正电源,引脚5为负电源,引脚6为反相输入,引脚7为输出,以此类推。

4. 参数特性:包括电源电压范围、输入偏置电流、增益带宽积等。

5. 功能详解:LM324可以进行加法、减法、积分、微分等模拟信号处理。

6. 应用信息:适用于音频放大、传感器信号调理、滤波器设计等。

7. 封装信息:提供多种封装形式,如SOIC、DIP等。
CECS0324V-G 价格&库存

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