CEFB101-G

SMD Efficient Fast Recovery Rectifier CEFB101-G Thru CEFB105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop 0.185(4.70) 0.160(4.06) 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) SMB / DO-214AA Mechanical Data: Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFB101-G 50 50 35 CEFB102-G 100 100 70 CEFB103-G CEFB104-G CEFB105-G 200 200 140 400 400 280 600 600 420 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 30 A 1.0 0.875 25 1.1 35 1.25 50 A V nS uA o C/W o o 5.0 200 13 150 -55 to +150 Tj TSTG C C N ote1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 c opper pad areas. “-G” suffix designates RoHS compliant Version Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G) Fig.1- Reverse Characteristics 100 10 CEFB101-G ~ 103-G Fig.2 - Forward Characteristics Reverse Current (uA) Forward Current (A) CEFB104-G 1.0 10 1.0 0.1 CEFB105-G 0.1 0.01 Pulse width 300uS 4% duty cycle 0.01 0 15 30 45 60 75 90 105 120 135 150 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance Fig.4 - Non Repetitive Forward Surge Curre Peak Surge Forward Current (A) 100 Number of Cycles at 60Hz f=1MHz and applied 4VDC reverse voltage Junction Capacitance (pF) CEFB104-G ~ 105-G CEFB104-G ~ 105-G 0.01 0.1 1.0 10 Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics trr NONINDUCTIVE NONINDUCTIVE Fig. 6 - Current Derating Curve D.U.T. OSCILLISCOPE Single Phase Half Wave 60Hz 1cm NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. SET TIME BASE FOR 50 / 10ns / cm 0 25 50 75 100 125 150 175 Ambient Temperature “-G” suffix designates RoHS compliant Version P age2