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CEFC302-G

CEFC302-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CEFC302-G - SMD Efficient Fast Recovery Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CEFC302-G 数据手册
SMD Efficient Fast Recovery Rectifier CEFC301-G Thru CEFC305-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 3.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop 0.124(3.15) 0.108(2.75) 0.245(6.22) 0.220(5.59) SMC/DO-214AB 0.280(7.11) 0.260(6.60) 0.012(0.30) 0.006(0.15) 0.103(3.62) 0.079(2.00) 0.050(1.27) 0.030(0.76) 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeter) 0.008(0.20) 0.0203(0.10) Mechanical Data: Case: JEDEC DO-214AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFC301-G 50 50 35 CEFC302-G 100 100 70 CEFC303-G CEFC304-G CEFC305-G 200 200 140 400 400 280 600 600 420 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 75 A 3.0 0.875 25 1.1 35 1.25 50 A V nS uA o C/W o o 5.0 200 13 -55 to +150 -55 to +150 Tj TSTG C C N ote1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 c opper pad areas. “-G” suffix designates RoHS compliant Version Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFC301-G thru CEFC305-G) Fig. 1 - Reverse Characteritics 100 10 Fig.2 - Forward Characteristics CEFC301-303 CEFC304 Reverse Current (uA) 10 Forward current ( A ) Tj=125 C 1.0 1.0 Tj=75 C 0.1 CEFC305 0.01 0.1 Tj=25 C 0.01 0.001 Tj=25 C Pulse width 300uS 4% duty cycle 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage(V) Fig. 3 - Junction Capacitance 200 100 1 00 Fig. 4 - Non Repetitive Forward Surge Current Peak Surge Forward Current (A) 8.3mS Single HalfSine Wave JEDEC methode J unction Capacitance (pF) 80 60 Tj=25 C 10 Tj=25 C 40 20 0 2.0 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 3.5 Fig. 6 - Current Derating Curve Average Forward Current (A) 50 NONINDUCTIVE 10 trr +0.5A | | | | | | | | NONINDUCTIVE 3.0 2.5 2.0 1.5 1.0 0.5 00 (+) () 25Vdc (approx.) () D.U.T. PULSE GENERATOR (NOTE 2) (+) 0 -0.25A 1 NONINDUCTIVE OSCILLSCOPE (NOTE 1) Single Phase Half Wave 60Hz NOTES: 1. Rise Time = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. -1.0A 1cm 25 50 75 100 125 150 175 SET TIME BASE FOR 50 / 10ns / cm Ambient Temperature ( C) “-G” suffix designates RoHS compliant Version P age1
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