SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
C EFL101 Thru CEFL105
R everse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp
Features
DO-213AB (Plastic Melf)
I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop
0.022(0.55) Max.
0.205(5.2) 0.195(4.8)
Mechanical Data
C ase: Mini-SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.116 gram
0.105(2.67) 0.095(2.40)
D imensions in inches and (millimeters)
M aximum Ratings and Electrical Characterics
P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Typical. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CEFL 101 50 50 35 CEFL 102 100 100 70 CEFL 103 200 200 140 CEFL 104 400 400 280 CEFL 105 600 600 420
Unit
V V V A
30
Io VF Trr IR R
0.875 25
1.0
1.1 35 1.25 50
A V nS uA
5.0 250 50 -55 to +150 -55 to +150
JL
C /W C C
Tj T STG
N ote 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
M DS0210022B
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SMD Efficient Fast Recovery Rectifier S MD
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CEFL101 Thru CEFL105)
Fig. 1 - Reverse Characteristics
100
10
F ig.2 - Forward Characteristics
CEFL101-103
R everse Current ( uA )
Tj=125 C 10
Forward current ( A )
1.0
CEFL104
1.0
Tj=75 C
0.1
CEFL105
0.01
Tj=25 C Pulse width 300uS 4% duty cycle
0.1
Tj=25 C
0. 01 0
0.001
15
30 45 60 75 90 105 120 135 150
0 0 .2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
F ig. 3 - Junction Capacitance
35 30
Fig. 4 - Non Repetitive Forward Surge Current
P eak Surge Forward Current ( A )
50
8.3mS Single Half Sine Wave JEDEC methode
f=1MHz and applied 4VDC reverse voltage Tj=25 C
J unction Capacitance (pF)
40
25 20
30 Tj=25 C 20
CEFL101-103
15 10 5 0
CEFL104-105
10 0
0.01
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
N umber of Cycles at 60Hz
Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A
Fig. 6 - Current Derating Curve
2.8
Average Forward Current ( A )
trr
| | | | | | | |
2.4 2.0 1.6 1.2 0.8 0.4 00
(+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() PULSE GENERATOR (NOTE 2) (+) 0 -0.25A
S ingle Phase Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210022B
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