SMD Efficient Fast Recovery Rectifier
CEFL101-G Thru CEFL105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features:
Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Built-in strain relief High surge current capability
0.022 (0.56) 0.018 (0.46) 0.205 (5.20) 0.185 (4.70)
DO-213AB (PLASTIC MELF)
Mechanical Data:
Case: JEDEC DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.116 gram
0.105 (2.67) 0.095 (2.41)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics:
Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFL101-G 50 50 35 CEFL102-G 100 100 70 CEFL103-G CEFL104-G CEFL105-G 200 200 140 400 400 280 600 600 420 Unit V V V
VRRM VDC VRMS IFSM Io VF Trr IR R
JL
30
A
1.0 0.875 25 1.1 35 1.25 50
A V nS uA
o
5.0 250 50 -55 to +155 -55 to +125
C/W
o
Tj TSTG
C
oC
N ote1: Thermal resistance from junction to lead 8.0mm square (0.13mm thick) land areas.
“-G” suffix designates RoHS compliant Version www.comchiptech.com
Page1
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFL101-G thru CEFL105-G)
Fig. 1 - Reverse characteristics
100
Fig.2 - Forward characteristics
10
10 FL CE
Reverse current (mA)
FL
10 CE
4
10
Forward Current (A)
1.0
1-
10
Tj=125 C
3
1
0.1
0.1
Tj=25 C
0.01
Tj=25 C Pulse width 300uS 1% duty cycle
0.01 0 15 30 45 60 75 90 105 120 135 150
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.4
Percent of rated peak reverse voltage (%)
Forward Voltage (V)
Fig. 3 - Junction Capacitance
35 30 50
Fig.4 - Non Repetitive Forward Surge Curre
8.3ms single half sine wave JEDEC method
Peak Surge Forward Current (A)
f = 1 MHz and applied 4VDC reverse voltage
Junction Capacitance (pF)
40
25 Tj=25 C 20 15 10 CEFL104 -105 5 0 0.01 0.1 1.0 10 100 CEFL101-103
30 Tj=25 C 20
10 0 1 5 10 50 1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test circuit diagram and Reverse recovery time characteristics
50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A
| | | | | | | |
1.2
Average forward current ( A )
(+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() PULSE GENERATOR (NOTE 2) (+)
0 -0.25A
0.8
0.6 0.4 0.2 0
CE
1.0
FL
Tj=80 C
Fig. 6 - Current derating curve
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
10
5
Single phase Half wave 60Hz
25
50
75
100
125
150
175
Ambient temperature ( C)
“-G” suffix designates RoHS compliant Version www.comchiptech.com
P age2
很抱歉,暂时无法提供与“CEFL105-G”相匹配的价格&库存,您可以联系我们找货
免费人工找货