CFPA10MD

Glass Passivated Sintered Fast Recovery Rectifier COMCHIP www.comchip.com.tw C FPA10MD R everse Voltage: 1200 Volts Forward Current: 1.0 Amp F eatures DO-214AC (SMA) - Glass passivated cavity-free junction - Ideal for surface mount automotive application - Plastic package has Underwriters Lab. flammability classification 94V-0 - Built-in strain relief - High temperature soldering guaranteed: 350 degree C/10sec, at terminals - For use in high frequency rectifier circuits 0.067(1.70) 0.051(1.29) 0.180(4.57) 0.160(4.06) 0.110(2.79) 0.086(2.18) 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) M echanical data Case: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Weight:0.064 gram 0.209(5.31) 0.185(4.70) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics P arameter Max.RepetitivePeak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave Sine-wave superimposed on Rate load ( JEDEC ) Max. AverageForward Current Max. Instantaneous Forward Current at 1.0 A Reverse Recovery Time Max. DC Reverse Current at rated DC Blocking Voltage Ta=25 C Ta=125 C Max. Thermal Resistance (Note 1) Operating Junction temperature Storage Temperature Symbol V RRM V DC V RMS I FSM C FPA10MD 1 200 1200 840 20 U nit V V V A Io VF 1 .0 1.8 A V nS uA Trr 300 IR R 5 50 65 -55 to +175 -55 to +175 C/W C C JA Tj T STG Note 1: Thermal resistance from junction to ambient at 0.375 (9.5 mm) lead lengths, P.C. B. Mounted. MDS0303007A Page 1 Glass Passivated Sintered Fast Recovery Rectifier COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CFPA10MD) Fig. 1 - Reverse Characteristics 100 100 F ig.2 - Forward Characteristics Reverse Current ( uA ) 10 F orward Current ( A ) T j=125 C Tj=25 C Pulse width=300us 1% duty cycle 10 1 Tj=75 C Tj=25 C 1.0 0.1 0 .1 0.01 0 .01 0 20 40 60 80 100 0 .4 0.8 1.2 1.6 2.0 2.4 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance 10 25 Fig. 4 - Non Repetitive Forward Surge Current P eak Surge Forward Current ( A ) 8.3mS Single Half Sine Wave JEDEC methode J unction Capacitance (pF) 6 Tj=25 C 4 20 15 T j=25 C 10 2 5 0 1 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) N umber of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) M DS0303007A Page 2