CFRB202

SMD Fast Recovery Rectifier COMCHIP w ww.comchip.com.tw C FRB201 Thru CFRB207 R everse Voltage: 50 - 1000 Volts Forward Current: 2.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Fast recovery time: 150 - 500 nS Low leakage current SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical data C ase: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.093 gram 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.012(0.31) 0.006(0.15) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CFRB 201 50 50 35 CFRB 202 100 100 70 CFRB 203 200 200 140 CFRB 204 400 400 280 CFRB 205 600 600 420 CFRB 206 800 800 560 CFRB 207 1 000 1000 700 Unit V V V A 60 Io VF Trr IR R 1 00 2.0 1 .3 2 50 5 .0 50 20 -55 to +150 -55 to +150 5 00 A V nS uA JL C /W C C Tj T STG N ote 1: Thermal resistance from junction to lead 8.0x8.0 mm square (0.13mm thick) land area. M DS0210012B Page 1 SMD Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CFRB201 Thru CFRB207) Fig. 1 - Reverse Characteristics 1000 100 F ig.2 - Forward Characteristics R everse Current ( uA ) Forward current ( A ) 100 Tj=125 C 10 10 1 1.0 Tj=25 C 0.1 0 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 0.01 30 60 90 120 150 0 0 .4 0.8 1.2 1.6 2.0 P ercent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance Peak Surge Forward Current ( A ) 1 40 60 Fig. 5 - Non Repetitive Forward Surge Current 8.3mS Single Half Sine Wave JEDEC methode J unction Capacitance (pF) 120 100 80 60 40 20 0 0.1 1.0 10 100 1000 Tj=25 C f=1.0MHz Vsig=50mV p-p 50 40 30 T j=25 C 20 10 0 1 5 10 50 1 00 Reverse Voltage (V) N umber of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.1 Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210012B Page 2